Functionality and performance improvements with field-based OPC

Ben Painter; Kunal Taravade; Levi Barnes; Robert Lugg; Jeff Mayhew; Glenn Newell; Kevin Lucas

doi:10.1117/12.729012

15 May 2007 Functionality and performance improvements with field-based OPC

Ben Painter, Kunal Taravade, Levi Barnes, Robert Lugg, Jeff Mayhew, Glenn Newell, Kevin Lucas

Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 66072T (2007) https://doi.org/10.1117/12.729012
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan

Abstract

The upcoming 45nm and 32nm device generations will continue the familiar industry lithography trends of decreased production K1 factor, reduced focus error tolerances and increased pattern density. As previous experience has shown, small changes in the values of lithographic K1, focus tolerance and pattern density for the process-design space can lead to large required changes in OPC and RET solutions. Therefore, significant improvements in utility and speed are needed for these new device generations. In this paper we highlight significant new functionality and performance capabilities using existing Field-based OPC and RET methods. The use of dense grid calculations in Field-based methods is shown to provide a software platform for robust and fast implementation of new model-based RET techniques such as model-based assist feature placement and tuning. We present the performance and capability increases for model-based RET methods. Additionally, we have studied and present the performance of production 45nm generation field-based OPC and RET software across several different multiple-purpose hardware platforms. Significant improvements in runtime (for approximately the same hardware cost) are observed with new general purpose hardware platforms and with software optimization for this hardware.

Citation Download Citation

Ben Painter, Kunal Taravade, Levi Barnes, Robert Lugg, Jeff Mayhew, Glenn Newell, and Kevin Lucas "Functionality and performance improvements with field-based OPC", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66072T (15 May 2007); https://doi.org/10.1117/12.729012

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
10 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Optical proximity correction

Model-based design

Resolution enhancement technologies

Atrial fibrillation

Image segmentation

Semiconducting wafers

Computer simulations

Show All Keywords

Keywords/Phrases

Search In:

Publication Years