Paper
24 March 2016 Improving OCD time to solution using Signal Response Metrology
Fang Fang, Xiaoxiao Zhang, Alok Vaid, Stilian Pandev, Dimitry Sanko, Vidya Ramanathan, Kartik Venkataraman, Ronny Haupt
Author Affiliations +
Abstract
In recent technology nodes, advanced process and novel integration scheme have challenged the precision limits of conventional metrology; with critical dimensions (CD) of device reduce to sub-nanometer region. Optical metrology has proved its capability to precisely detect intricate details on the complex structures, however, conventional RCWA-based (rigorous coupled wave analysis) scatterometry has the limitations of long time-to-results and lack of flexibility to adapt to wide process variations. Signal Response Metrology (SRM) is a new metrology technique targeted to alleviate the consumption of engineering and computation resources by eliminating geometric/dispersion modeling and spectral simulation from the workflow. This is achieved by directly correlating the spectra acquired from a set of wafers with known process variations encoded. In SPIE 2015, we presented the results of SRM application in lithography metrology and control [1], accomplished the mission of setting up a new measurement recipe of focus/dose monitoring in hours. This work will demonstrate our recent field exploration of SRM implementation in 20nm technology and beyond, including focus metrology for scanner control; post etch geometric profile measurement, and actual device profile metrology.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Fang Fang, Xiaoxiao Zhang, Alok Vaid, Stilian Pandev, Dimitry Sanko, Vidya Ramanathan, Kartik Venkataraman, and Ronny Haupt "Improving OCD time to solution using Signal Response Metrology", Proc. SPIE 9778, Metrology, Inspection, and Process Control for Microlithography XXX, 977806 (24 March 2016); https://doi.org/10.1117/12.2219775
Lens.org Logo
CITATIONS
Cited by 3 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Metrology

Semiconducting wafers

Model-based design

Etching

Scatterometry

Signal processing

Critical dimension metrology

Back to Top