ArFi speckle reduction and impact on local CDU

Will Conley; Stephen Hsu; Michael Crouse; Dylan Martin; Rajasekhar Rao; Natalllia Karlitskaya; Dirk van Leuken; Jan Baselmans; Marieke van Veen; Edwin de Jong; Birgitt Hepp; Rasmus Nielsen; Eric Bakker

doi:10.1117/12.3010892

10 April 2024 ArFi speckle reduction and impact on local CDU

Will Conley, Stephen Hsu, Michael Crouse, Dylan Martin, Rajasekhar Rao, Natalllia Karlitskaya, Dirk van Leuken, Jan Baselmans, Marieke van Veen, Edwin de Jong, Birgitt Hepp, Rasmus Nielsen, Eric Bakker

Author Affiliations +

Proceedings Volume PC12953, Optical and EUV Nanolithography XXXVII; PC129530D (2024) https://doi.org/10.1117/12.3010892
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

Speckle can be reduced through increased laser bandwidth co-optimized with SMO-OPC. Figure 1 is a plot of calculated speckle contrast for the Cymer 860ix laser that is coupled with the ASML NXT 2000 scanner and the Cymer 960ix coupled with the ASML NXT 2050 scanner with the increased pulse duration (TIS is time integral squared) vs laser bandwidth. We focus on 300fm speckle contrast for the XLR 960ix (blue) and the XLR 860ix (red) at 640fm, where the speckle contrast is equal which is a reduction of 30%. On wafer LWR vs laser bandwidth for a 56nm line on a 120nm pitch test case data has been generated. This case was used in the qualification of the pulse stretcher2. Wafers have been processed with a fixed imaging pupil and mask CD with increasing laser bandwidth. This data will be reviewed, to demonstrate a reduction in local critical dimension uniformity (LCDU). The Authors will review simulations, experimental data and the process to develop a working imaging solution that further reduces LCDU.

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Will Conley, Stephen Hsu, Michael Crouse, Dylan Martin, Rajasekhar Rao, Natalllia Karlitskaya, Dirk van Leuken, Jan Baselmans, Marieke van Veen, Edwin de Jong, Birgitt Hepp, Rasmus Nielsen, and Eric Bakker "ArFi speckle reduction and impact on local CDU", Proc. SPIE PC12953, Optical and EUV Nanolithography XXXVII, PC129530D (10 April 2024); https://doi.org/10.1117/12.3010892

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KEYWORDS

Speckle

Pulsed laser operation

Line width roughness

Laser scanners

Semiconducting wafers

Data processing

Edge roughness

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