Dr. Rasmus B. Nielsen Profile

Dr. Rasmus B. Nielsen

at ASML Netherlands BV

SPIE Involvement:

Author

Publications (11)

Proceedings Article | 10 April 2024 Presentation

ArFi speckle reduction and impact on local CDU

Will Conley, Stephen Hsu, Michael Crouse, Dylan Martin, Rajasekhar Rao, Natalllia Karlitskaya, Dirk van Leuken, Jan Baselmans, Marieke van Veen, Edwin de Jong, Birgitt Hepp, Rasmus Nielsen, Eric Bakker

Proceedings Volume PC12953, PC129530D (2024) https://doi.org/10.1117/12.3010892

KEYWORDS: Speckle, Pulsed laser operation, Line width roughness, Semiconducting wafers, Laser scanners, Simulations, Red lasers, Modulation, Edge roughness, Data processing

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Proceedings Article | 13 June 2022 Presentation

KrF Multi-focal imaging system for advanced and legacy applications

Will Conley, G. Padmabandu, Yzzer Roman, Yingbo Zhao, Toufiq Aman, James Bonafede, Emmanuel Rausa, Rasmus Nielsen, Ijen van Mil, Rongkuo Zhao

Proceedings Volume PC12051, PC120510B (2022) https://doi.org/10.1117/12.2615263

KEYWORDS: Imaging systems, Process control, Photoresist materials, Lithography, 3D image processing, Semiconducting wafers, Scanners, Overlay metrology, Optical lithography, Image processing

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Proceedings Article | 26 May 2022 Presentation + Paper

Impact of mask variations on CD and placement in resist: local versus global effects

Guillaume Mernier, Danielle Palmen, Nicole Schoumans, Marieke van Veen, Rasmus Nielsen, Jan Baselmans

Proceedings Volume 12051, 1205104 (2022) https://doi.org/10.1117/12.2613333

KEYWORDS: Photomasks, Computer simulations, Reticles, Deep ultraviolet, Convolution

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SPIE Journal Paper | 18 March 2013

Mask characterization for critical dimension uniformity budget breakdown in advanced extreme ultraviolet lithography

Peter Nikolsky, Chris Strolenberg, Rasmus Nielsen, Tjitte Nooitgedacht, Natalia Davydova, Greg Yang, Shawn Lee, Chang-Min Park, Insung Kim, Jeongho Yeo

JM3, Vol. 12, Issue 02, 021006, (March 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.2.021006

KEYWORDS: Photomasks, Reticles, Critical dimension metrology, Semiconducting wafers, Extreme ultraviolet lithography, Extreme ultraviolet, Cadmium, Reflectivity, Scanners, Semiconductors

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As the International Technology Roadmap for Semiconductors critical dimension uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. We will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for advanced extreme ultraviolet (EUV) lithography with 1D (dense lines) and 2D (dense contacts) feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CDs and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples. Mask stack reflectivity variations should also be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We also observed mask error enhancement factor (MEEF) through field fingerprints in the studied EUV cases. Variations of MEEF may play a role towards the total intrafield CDU and may need to be taken into account for EUV lithography. We characterized MEEF-through-field for the reviewed features, with results herein, but further analysis of this phenomenon is required. This comprehensive approach to quantifying the mask part of the overall EUV CDU contribution helps deliver an accurate and integral CDU BB per product/process and litho tool. The better understanding of the entire CDU budget for advanced EUVL nodes achieved by Samsung and ASML helps extend the limits of Moore’s Law and to deliver successful implementation of smaller, faster and smarter chips in semiconductor industry.

Proceedings Article | 8 November 2012 Paper

Mask characterization for CDU budget breakdown in advanced EUV lithography

Peter Nikolsky, Chris Strolenberg, Rasmus Nielsen, Tjitte Nooitgedacht, Natalia Davydova, Greg Yang, Shawn Lee, Chang-Min Park, Insung Kim, Jeong-Ho Yeo

Proceedings Volume 8522, 85220P (2012) https://doi.org/10.1117/12.970395

KEYWORDS: Photomasks, Reticles, Semiconducting wafers, Extreme ultraviolet, Extreme ultraviolet lithography, Critical dimension metrology, Scanners, Reflectivity, Cadmium, Semiconductors

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As the ITRS Critical Dimension Uniformity (CDU) specification shrinks, semiconductor companies need to maintain a high yield of good wafers per day and a high performance (and hence market value) of finished products. This cannot be achieved without continuous analysis and improvement of on-product CDU as one of the main drivers for process control and optimization with better understanding of main contributors from the litho cluster: mask, process, metrology and scanner. In this paper we will demonstrate a study of mask CDU characterization and its impact on CDU Budget Breakdown (CDU BB) performed for an advanced EUV lithography with 1D and 2D feature cases. We will show that this CDU contributor is one of the main differentiators between well-known ArFi and new EUV CDU budgeting principles. We found that reticle contribution to intrafield CDU should be characterized in a specific way: mask absorber thickness fingerprints play a role comparable with reticle CDU in the total reticle part of the CDU budget. Wafer CD fingerprints, introduced by this contributor, may or may not compensate variations of mask CD’s and hence influence on total mask impact on intrafield CDU at the wafer level. This will be shown on 1D and 2D feature examples in this paper. Also mask stack reflectivity variations should be taken into account: these fingerprints have visible impact on intrafield CDs at the wafer level and should be considered as another contributor to the reticle part of EUV CDU budget. We observed also MEEF-through-field fingerprints in the studied EUV cases. Variations of MEEF may also play a role for the total intrafield CDU and may be taken into account for EUV Lithography. We characterized MEEF-through-field for the reviewed features, the results to be discussed in our paper, but further analysis of this phenomenon is required. This comprehensive approach to characterization of the mask part of EUV CDU characterization delivers an accurate and integral CDU Budget Breakdown per product/process and Litho tool. The better understanding of the entire CDU budget for advanced EUVL nodes achieved by Samsung and ASML helps to extend the limits of Moore's Law and to deliver successful implementation of smaller, faster and smarter chips in semiconductor industry.

Proceedings Article | 10 September 2011 Paper

Studies of plasmonic hot-spot translation by a metal-dielectric layered superlens

Mark Thoreson, Rasmus Nielsen, Paul West, Arian Kriesch, Zhengtong Liu, Jieran Fang, Alexander Kildishev, Ulf Peschel, Vladimir Shalaev, Alexandra Boltasseva

Proceedings Volume 8093, 80931J (2011) https://doi.org/10.1117/12.894225

KEYWORDS: Antennas, Near field scanning optical microscopy, Near field, Polarization, Finite-difference time-domain method, Silver, Metals, Dielectrics, Near field optics, Nanoantennas

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Proceedings Article | 11 September 2010 Paper

Investigations of scattering and field enhancement effects in retardation-based plasmonic nanoantennas

M. Nielsen, A. Pors, R. Nielsen, A. Boltasseva, O. Albrektsen, M. Willatzen, S. Bozhevolnyi

Proceedings Volume 7757, 77573O (2010) https://doi.org/10.1117/12.868363

KEYWORDS: Scattering, Plasmonics, Antennas, Light scattering, Refractive index, Gold, Reflection, Split ring resonators, Nanoantennas, Nanorods

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Proceedings Article | 29 April 2010 Paper

Metal-dielectric composites with tunable optical properties

Rasmus Nielsen, Anders Kristensen, Jørn Hvam, Alexandra Boltasseva

Proceedings Volume 7711, 77111Q (2010) https://doi.org/10.1117/12.855826

KEYWORDS: Silver, Metals, Antennas, Optical properties, Dielectrics, Zinc oxide, Sputter deposition, Composites, Ellipsometry, Nanoantennas

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Proceedings Article | 2 September 2009 Paper

Experimental investigation of Fang's Ag superlens suitable for integration

Claus Jeppesen, Rasmus Nielsen, Sanshui Xiao, Niels Asger Mortensen, Alexandra Boltasseva, Anders Kristensen

Proceedings Volume 7395, 73951I (2009) https://doi.org/10.1117/12.825940

KEYWORDS: Silver, Photomasks, Aluminum, Semiconducting wafers, Polymethylmethacrylate, Photoresist materials, Surface plasmons, Atomic force microscopy, Reactive ion etching, Interfaces

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Proceedings Article | 6 February 2008 Paper

Fabrication of plasmonic waveguides by nanoimprint and UV lithography

Rasmus Nielsen, Alexandra Boltasseva, Anders Kristensen, Sergey Bozhevolnyi, Valentyn Volkov, Irene Fernandez Cuesta, Anna Klukowska

Proceedings Volume 6883, 688304 (2008) https://doi.org/10.1117/12.762999

KEYWORDS: Gold, Nanoimprint lithography, Metals, Waveguides, Near field optics, Surface roughness, Near field scanning optical microscopy, Ultraviolet radiation, Silicon, Plasmonics

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Proceedings Article | 28 September 2007 Paper

Fabrication of plasmonic waveguides for device applications

Alexandra Boltasseva, Kristjan Leosson, Tiberiu Rosenzveig, Rasmus Nielsen, Rasmus Pedersen, Kasper Jørgensen, Irene Fernandez-Cuesta, Jesper Jung, Thomas Søndergaard, Sergey Bozhevolnyi, Anders Kristensen

Proceedings Volume 6638, 663804 (2007) https://doi.org/10.1117/12.732836

KEYWORDS: Metals, Gold, Waveguides, Polymers, Plasmonic waveguides, Wave propagation, Nanoimprint lithography, Silicon, Dielectrics, Nanowires

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Showing 5 of 11 publications

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