1 October 2010 Impact of extreme ultraviolet mask absorber defect with pattern roughness on lithographic images
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Abstract
The impact of an EUV mask absorber defect with pattern roughness on lithographic images was studied. In order to reduce systematic line width roughness (LWR) of wafer printed patterns, the mask making process was improved; and in order to reduce random LWR, low line-edge roughness resist material and a critical dimension averaging method of multiple-exposure shots were introduced. Then, by using a small field exposure tool, a mask-induced systematic printed LWR was quantified and estimated at 32-nm half-pitch and 28-nm half-pitch. The measurement results of the critical mask absorber defect size were compared with the simulation, and the results were then discussed.
©(2010) Society of Photo-Optical Instrumentation Engineers (SPIE)
Takashi Kamo, Hajime Aoyama, Yukiyasu Arisawa, Mihoko Kijima, Toshihiko Tanaka, and Osamu Suga "Impact of extreme ultraviolet mask absorber defect with pattern roughness on lithographic images," Journal of Micro/Nanolithography, MEMS, and MOEMS 9(4), 041204 (1 October 2010). https://doi.org/10.1117/1.3494618
Published: 1 October 2010
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Cited by 1 scholarly publication.
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KEYWORDS
Photomasks

Line width roughness

Image processing

Scanning electron microscopy

Extreme ultraviolet lithography

Lithography

Extreme ultraviolet

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