On-product overlay (OPO) control in the DRAM process has become a critical component from node to node to produce high device yield. To meet OPO node goals, Non-Zero Offset (NZO) and its stability across lots must be monitored and controlled. NZO is the bias between overlay (OVL) on-target measurement at After Development Inspection (ADI) vs. on-device measurement at After Etching Inspection (AEI). In this paper, we will present Imaging-Based Overlay (IBO) metrology data at ADI of two different marks, segmented AIM® with design rule patterns and robust AIM (rAIM®) with Moiré effect with a small pitch. NZO analysis will be presented for each target type including basic performance.
Advanced semiconductor devices target sub-2nm on-product overlay (OPO) and manufacturers utilize dense overlay (OVL) sampling and non-zero offset (NZO) control to enable such strict performance. Accurate optical OVL metrology systems with fast move-and-measurement (MAM) utilized at the after-develop inspection (ADI) step are required to support this OPO trend. This work presents an innovative Artificial Intelligence (AI) based, ultra-high-speed, overlay target focusing and centering approach on imaging-based overlay (IBO) measurements in the ADI step. The algorithm uses pre-trained image features and a deep learning model. The algorithm allows the measurement of every site across the wafer in its best centering and contrast focus position and thus overcomes intra-wafer process variations and enhanced measurement accuracy. The data will include results from multi-lot advanced DRAM process with basic performance analysis such as total measurement uncertainty (TMU), tool-to-tool matching (TTTM) and additional key performance indicators (KPIs).
As the semiconductor industry rapidly approaches the 3nm lithography node, on-product overlay (OPO) requirements have become tighter, which drives metrology performance enhancements to meet the reduction in overlay (OVL) residuals. The utilization of multiple measurement wavelengths in Imaging- Based Overlay (IBO) has increased in the past few years to meet these needs. Specifically, the color per layer (CPL) method allows for optimizing the OVL measurement conditions per layer, including focus, light, wavelength (WL), and polarization customization which enhance the metrology results. CPL is applicable for multiple technology segments (logic, foundry, DRAM, 3D NAND), relevant for different devices (DRAM high stack layers, NAND channel holes, etc.), and can work well for both thin and thick layers for standard and EUV lithography processes. In this paper, we will review the benefits of CPL for multiple DRAM and NAND critical layers. We will describe how CPL can contribute to measurement accuracy by quantifying the OVL residual reduction in comparison to single-wavelength (SWL) measurement conditions.
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