CONFERENCE PROCEEDINGS
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Jeong-Geun Park
at SAMSUNG Electronics Co Ltd
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Publications (3)
Proceedings Article | 5 April 2011 Paper
The effective etch process proximity correction methodology for improving on chip CD variation in 20 nm node DRAM gate
Proceedings Volume 7974, 79740Y (2011) https://doi.org/10.1117/12.881472
KEYWORDS: Etching, Photomasks, Critical dimension metrology, Personal protective equipment, Performance modeling, Transistors, Control systems, Instrument modeling, Scanning electron microscopy, Calibration
Proceedings Article | 24 March 2008 Paper
Systematic defect inspection and verification for distributions of critical dimension in OPC models utilizing design based metrology tool
Jeong-Geun Park, Sang-ho Lee, Young-Seog Kang, Young-Kyou Park, Tadashi Kitamura, Toshiaki Hasebe, Shinichi Nakazawa
Proceedings Volume 6922, 69222C (2008) https://doi.org/10.1117/12.772574
KEYWORDS: Coating, Carbon, Critical dimension metrology, Optical proximity correction, Scanning electron microscopy, Defect inspection, Tin, Semiconducting wafers, Metrology, Optical inspection
Proceedings Article | 26 March 2007 Paper
OPC in memory-device patterns using boundary layer model for 3-dimensional mask topographic effect
Young-Chang Kim, Insung Kim, JeongGeun Park, Sangwook Kim, Sungsoo Suh, Yongjin Cheon, Sukjoo Lee, Junghyeon Lee, Chang-Jin Kang, Jootae Moon, Jonathan Cobb, Sooryong Lee
Proceedings Volume 6520, 65200T (2007) https://doi.org/10.1117/12.711832
KEYWORDS: Optical proximity correction, 3D modeling, Photomasks, Near field, Polarization, Chromium, 3D image processing, Transmittance, Binary data, Optical lithography
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