We have developed a massive on-cell overlay metrology system based on Mueller matrix measurements. By integrating microscopic techniques into ellipsometry, we achieved high-throughput and extensive sampling coverage, with 1-shot/field per 1-field of view (FOV) measurement capability within a 34 x 34 mm2 FOV. Analyzing the off-diagonal components of the Mueller matrix allowed for on-cell overlay measurement across the wafer. This system provides measurement sensitivity comparable to e-beam-based technologies while offering high coverage, enabling precise reticle correction or high-order overlay correction in photolithography processes. This advancement represents a significant improvement in overlay metrology, offering both sensitivity and resolution for enhanced semiconductor manufacturing processes.
To achieve high accuracy and precision in optical metrology for advanced semiconductors, it is crucial to identify and compensate for errors from optical components and environmental perturbations. In this study, we investigated the sources of the errors in the interferometric ellipsometer developed for next-generation OCD. The objective lens and beam splitters, the critical optical components of the system, are intensively investigated. The system errors induced by temperature fluctuation, wavelength inaccuracy, and defocus were quantitatively examined. We also proposed methods for compensating individual errors and analyzed the effect of the compensation. As a result of error compensation, the accuracy and precision of the system is improved by 6.9 times and 2.3 times, respectively. Although the investigation was conducted based on our interferometric ellipsometry system, the finding is not limited to this system, as these errors are commonly found in most optical metrology systems. The proposed method for error compensation will be essential strategies for various ellipsometry systems suffering from a low level of accuracy and precision.
In this paper, we propose an unique metrology technique for the measurement of three-dimensional (3D) nanoscale structures of semiconductor devices, employing imaging-based massive Mueller-matrix spectroscopic ellipsometry (MMSE) with ultra-wide field of view (FOV) of 20×20 mm2. The proposed system enables rapid measurement of 10 million critical dimension (CD) values from all pixels in the image, while the conventional point-based metrology technique only measures a single CD value. We obtain Mueller matrix (MM) spectrum by manipulating wavelength and polarization states using a custom designed optical setup, and show that the proposed method characterizes complex 3D structures of the semiconductor device. We experimentally demonstrate CD measurement performance and consistency in the extremely large FOV, and suggest that the combination of MMSE and massive measurement capability can provide valuable insights: fingerprints originated from the manufacturing process, which are not easily obtained with conventional techniques.
An innovative metrology technique has been devised to address current limitations of optical critical dimension (OCD) in advanced semiconductor metrology. This technique is based on multiple self-interferometric pupil imaging, called Mueller matrix self-interferometric pupil ellipsometry (M-SIPE). The system integrates an innovatively designed interference generator in both illuminating and imaging optics, allowing for the massive acquisition of full polarization information across entire angles around the device. The vast amount of information can offer fully comprehensive structural analysis, accomplishing enhanced sensitivity and the ability to break the well-known parameter correlation issues. The system employs a single-shot holographic measurement technique on the pupil plane, enabling rapid acquisition of three-dimensional spectral information, such as wavelengths, incidence angles, and azimuth angles. Thus, unlike conventional OCD tools, M-SIPE can obtain multi-angular and full polarization information without any mechanical movements. We verified the performance of M-SIPE by the experiment of non-patterned wafers of various conditions using an optical testbed. Our results confirmed good agreement between the experiment and theoretical simulations across all angular ranges. Furthermore, the actual device simulation was conducted to show sensitivity enhancement and ability for breaking the parameter correlation issues. The results confirmed that the large amount of angular information from M-SIPE technique could overcome current metrological challenges.
In recent years, the overlay specifications of advanced semiconductor devices have become extremely stringent. This challenging situation becomes severe for every new generation of the device development. However, conventional overlay metrology systems have limited throughput due to their point-based nature. Here, we first demonstrate the novel imaging Mueller-matrix spectroscopic ellipsometry (MMSE) technique, which can measure the overlay error of all cell blocks on a device wafer with extremely high throughput, much faster than conventional point-based spectroscopic ellipsometry (SE) technologies. It provides the super large field of view (FOV) ~ 20 × 20 mm2 together with high sensitivity based on Mueller information, which will be truly innovated solution not only for the overlay metrology, but also for critical dimension (CD) measurement, eventually maximizing process control and productivity of advanced node.
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