Mr. Kazuo Ozaki Profile

Kazuo Ozaki

at Fujitsu Labs Ltd

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Author

Publications (6)

Proceedings Article | 12 April 2021 Paper

Dual-band response in Type-II superlattice infrared photodetectors with a modified pBp design

R. Suzuki, K. Ozaki, Y. Matsumiya, Y. Yamazaki, K. Tsunoda, H. Nishino

Proceedings Volume 11741, 117410P (2021) https://doi.org/10.1117/12.2586042

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Proceedings Article | 7 May 2019 Paper

ALD-Al2O3 passivation effects on surface characteristics of InAs/GaSb type-II superlattice infrared photodetectors

R. Suzuki, K. Ozaki, K. Tsunoda, H. Nishino

Proceedings Volume 11002, 110020B (2019) https://doi.org/10.1117/12.2518574

KEYWORDS: Aluminum, Antimony, Gallium, Infrared photography, Infrared radiation, Atomic layer deposition, Indium arsenide

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Proceedings Article | 31 May 2005 Paper

Development of mid-wavelength QWIP FPA

Kazuo Ozaki, Yasuhito Uchiyama, Hironori Nishino, Yusuke Matsukura, Nobuyuki Kajihara, Toshio Fujii

Proceedings Volume 5783, (2005) https://doi.org/10.1117/12.603350

KEYWORDS: Quantum well infrared photodetectors, Doping, Staring arrays, Indium gallium arsenide, Absorption, Integrated optics, Medium wave, Quantum wells, Gallium arsenide, Aluminum

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Proceedings Article | 30 August 2004 Paper

Characterization of photocurrent of mid-wavelength quantum-well infrared photodetector (MW-QWIP)

Yasuhito Uchiyama, Hironori Nishino, Yusuke Matsukura, Kazuo Ozaki, Toshio Fujii

Proceedings Volume 5406, (2004) https://doi.org/10.1117/12.542964

KEYWORDS: Absorption, Quantum well infrared photodetectors, Indium gallium arsenide, Gallium arsenide, Quantum wells, Infrared radiation, Aluminum, Indium, Temperature metrology, Statistical analysis

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Proceedings Article | 1 September 1995 Paper

Evaluation of HgCdTe using laser beam induced current

Kenji Arinaga, Kazuo Ozaki, Gen Sudo, Nobuyuki Kajihara

Proceedings Volume 2554, (1995) https://doi.org/10.1117/12.218178

KEYWORDS: Semiconducting wafers, Mercury cadmium telluride, Etching, Nondestructive evaluation, Metals, Sodium, Ions, Mass spectrometry, P-type semiconductors, Temperature metrology

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Proceedings Article | 17 October 1994 Paper

Epitaxial growth of HgCdTe on sapphire for photovoltaic detectors

Kazuo Ozaki, Koji Fujiwara, Hiroji Ebe, Yoshihiro Miyamoto

Proceedings Volume 2269, (1994) https://doi.org/10.1117/12.188655

KEYWORDS: Mercury cadmium telluride, Diodes, Liquid phase epitaxy, Sapphire, Semiconducting wafers, Metalorganic chemical vapor deposition, Crystals, Photodiodes, Photovoltaic detectors, Infrared technology

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Showing 5 of 6 publications

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