Mr. Mac Mellish Profile

Mac Mellish

SPIE Involvement:

Author

Publications (2)

Proceedings Article | 4 April 2016 Paper

Benchmarking study of EUV resists for NXE:3300B

Yu-Jen Fan, Mac Mellish, Jun Sung Chun, Scott McWilliams, Cecilia Montgomery, Warren Montgomery

Proceedings Volume 9776, 97760W (2016) https://doi.org/10.1117/12.2222065

KEYWORDS: Extreme ultraviolet, Photoresist materials, Extreme ultraviolet lithography, Etching, Neodymium, Optical lithography, Photoresist developing, Lithography, Semiconducting wafers, Scanners

Read Abstract +

Proceedings Article | 8 November 2012 Paper

The E-beam resist test facility: performance testing and benchmarking of E-beam resists for advanced mask writers

Matt Malloy, Il Yong Jang, Mac Mellish, Lloyd Litt, Ananthan Raghunathan, John Hartley

Proceedings Volume 8522, 85220N (2012) https://doi.org/10.1117/12.978665

KEYWORDS: Photomasks, Photoresist processing, Semiconducting wafers, Metrology, Line width roughness, Silicon, Finite element methods, Polymers, Electron beam lithography, Extreme ultraviolet

Read Abstract +

With each new generation of e-beam mask writers comes the ability to write leading edge photomasks with improved patterning performance and increased throughput. However, these cutting-edge e-beam tools are often used with older generation resists, preventing the end-user from taking full advantage of the tool’s potential. The generation gap between tool and resist will become even more apparent with the commercialization of multi-beam mask writers, which are expected to be available for pilot line use around 2015. The mask industry needs resists capable of meeting the resolution, roughness, and sensitivity requirements of these advanced tools and applications.

The E-beam Resist Test Facility (ERTF) has been established to fill the need for consortium-based testing of e-beam resists for mask writing applications on advanced mask writers out to the 11nm half-pitch node and beyond. SEMATECH and the College of Nanoscale Science and Engineering (CNSE) began establishing the ERTF in early 2012 to test e-beam resist samples from commercial suppliers and university labs against the required performance metrics for each application at the target node. Operations officially began on June 12, 2012, at which time the first e-beam resist samples were tested. The ERTF uses the process and metrology infrastructure available at CNSE, including a Vistec VB300 Vectorscan e-beam tool adjusted to operate at 50kv. Initial testing results show that multiple resists already meet, or are close to meeting, the resolution requirements for mask writing at the 11nm node, but other metrics such as line width roughness still need improvement.

An overview of the ERTF and its capabilities is provided here. Tools, baseline processes, and operation strategy details are discussed, and resist testing and benchmarking results are shown. The long-term outlook for the ERTF and plans to expand capability and testing capacity, including resist testing for e-beam direct write lithography, are also discussed.

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years