Dielectric materials such as quartz are widely used in the field of electronics and communications, but it is difficult to process for achieving high-quality side-wall without evident defects. Femtosecond laser has ultra-short pulse width and high peak power, very suitable for micro/nano processing, which provides a feasible direction for processing high-quality quartz devices. The ultraviolet femtosecond laser processing system with the wavelength of 343 nm, the repetition frequency of 50 kHz was used to etch quartz chips. The laser spot is so small that the melt generated during the subsequent etching process cannot spill out and then deposited in the bottom, which seriously affects the efficiency of laser processing. A new etching method is proposed to change the conventional single-line path to rectangular path etching, which promotes the continuous spillage of melt during processing by expanding the etching width of the quartz surface and explore the laws of the rectangular path width for the depth, width and morphology of the processed microgroove.
This study optimizes the distribution function of laser light intensity inside the material, based on the interaction between a femtosecond laser of 800 nm wavelength and quartz crystal, comprehensively considering the changes in absorption coefficient and reflectivity caused by material anisotropy. Throughout the simulation of multi-pulse machining, the influence of processing parameters such as the number of pulses and pulse energy on the hole depth, hole taper, and cross-sectional topography was investigated. Finally, the three-dimensional topography processed at various scanning rates was researched, and the correlation between the spot overlap ratio and the bottom surface topography was examined.
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