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29 September 2021 Patterning performance with main chain scission type photoresist for EUV lithography
Akihide Shirotori, Manabu Hoshino, Danilo De Simone, Geert Vandenberghe, Hirokazu Matsumoto
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Proceedings Volume 11854, International Conference on Extreme Ultraviolet Lithography 2021; 118540O (2021) https://doi.org/10.1117/12.2600855
Event: SPIE Photomask Technology + EUV Lithography, 2021, Online Only
Abstract
Zeon developed ZER02#04 resists with main chain scission reaction to enhance patterning performance for EUVL. This presentation focuses on the patterning performance of contact hole patterns with ZER02#04DM at ADI and AEI. For example, at P40nm orthogonal C/H in ADI, the resolution at 17.5 nm in hole CD was achieved at the exposure dose of 76 mJ/cm2, giving a LCDU of 2.77 nm. And it could transfer P40nm orthogonal C/H patterns to SiO2 by etching. The LCDU in AEI was enhanced at 2.47 nm. Additionally, the results with novel resist for next generation plan to be introduced at my presentation.
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Akihide Shirotori, Manabu Hoshino, Danilo De Simone, Geert Vandenberghe, and Hirokazu Matsumoto "Patterning performance with main chain scission type photoresist for EUV lithography", Proc. SPIE 11854, International Conference on Extreme Ultraviolet Lithography 2021, 118540O (29 September 2021); https://doi.org/10.1117/12.2600855
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KEYWORDS
Extreme ultraviolet lithography
Electron beam lithography
Photoresist materials
Photoresist developing
Extreme ultraviolet
Lithography
Photoresist processing
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