A Hf0.5Zr0.5O2 non-volatile capacitor based on SrTiO3 substrate

Xingpeng Liu; Chunshu Wei; Huiping Tang; Yiming Peng; Chunsheng Jiang

doi:10.1117/12.3054992

4 November 2024 A Hf_0.5Zr_0.5O₂ non-volatile capacitor based on SrTiO₃substrate

Xingpeng Liu, Chunshu Wei, Huiping Tang, Yiming Peng, Chunsheng Jiang

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Proceedings Volume 13420, Third International Conference on New Materials, Machinery, and Vehicle Engineering (NMMVE 2024); 134201K (2024) https://doi.org/10.1117/12.3054992
Event: International Conference on New Materials, Machinery, and Vehicle Engineering 2024, 2024, Dalian, China

Abstract

The rapid of development of the Internet of Things (Iot), 5G communications, and smart technologies placing higher demands on storage-integrated hardware devices. The discovery of HfO₂-based ferroelectric materials has opened up a new avenue for achieving low-power logic and high-density non-volatile memory by utilizing this silicon-tolerant ferroelectric material. In this work, a 10 nm Hf_0.5Zr_0.5O₂ (HZO) ferroelectric films ware prepared on SrTiO₃ (STO) substrate using an atomic layer deposition system (ALD). After rapid annealing treatment, the surface roughness of HZO films showed nanometer level (Ra~1.033 nm, Rq~1.321 nm). HZO ferroelectric films with molybdenum (Mo) electrodes exhibit low coercive field (Ec~1.48 MV/cm) and excellent ferroelectric property (2Pr~56.143 µC/cm2 , and 2Pmax~ 81.070 µC/cm²). Under the fatigue signal of 100 kHz, the device exhibits stable anti-fatigue characteristics. Mo/HZO/Mo/STO devices exhibit fast response time (1ms) and stable polarization retention characteristics (over 10³ s). This work introduces a novel method for the next-generation non-volatile memory solutions (NVM).

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Xingpeng Liu, Chunshu Wei, Huiping Tang, Yiming Peng, and Chunsheng Jiang "A Hf_0.5Zr_0.5O₂ non-volatile capacitor based on SrTiO₃substrate", Proc. SPIE 13420, Third International Conference on New Materials, Machinery, and Vehicle Engineering (NMMVE 2024), 134201K (4 November 2024); https://doi.org/10.1117/12.3054992

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KEYWORDS

Electrodes

Molybdenum

Dielectric polarization

Annealing

Capacitors

Dielectrics

Materials properties

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