Composition Analysis of Heterojunctions by Means of Electron and Optical Spectroscopies

M. C. Grender; P. N. Uppal; L. C. Burton; L. Rivaud; J. E. Greene

doi:10.1117/12.970587

25 November 1980 Composition Analysis of Heterojunctions by Means of Electron and Optical Spectroscopies

M. C. Grender, P. N. Uppal, L. C. Burton, L. Rivaud, J. E. Greene

Proceedings Volume 0248, Role of Electro-Optics in Photovoltaic Energy Conversion; (1980) https://doi.org/10.1117/12.970587
Event: 24th Annual Technical Symposium, 1980, San Diego, United States

Abstract

Auger electron and atomic absorption spectroscopies (AES and AAS) have been used to measure compositions of Cu₂S/ZnxCd_1-xS heterojunctions. A Zn rich region near the Cu2S-ZnCdS interface is verified by both techniques. For Cu2S films grown by aqueous ion-exchange the amount of Zn enrichment at the interface increased with Cu₂S film thickness. Zn, Cd, Cl and 0 were detected by AES on the Cu₂S surface, with the Zn and Cd extending into the Cu₂S bulk. Amounts of Zn and Cd measured in the Cu₂S by means of AAS are less than about 0.1 atomic percent.

Citation Download Citation

M. C. Grender, P. N. Uppal, L. C. Burton, L. Rivaud, and J. E. Greene "Composition Analysis of Heterojunctions by Means of Electron and Optical Spectroscopies", Proc. SPIE 0248, Role of Electro-Optics in Photovoltaic Energy Conversion, (25 November 1980); https://doi.org/10.1117/12.970587

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