A novel approach to the mask inspection for proximity electron lithography based on electron beam imaging

Kazuya Iwase; Shinji Omori; Shoji Nohama; Kenta Yotsui; Gaku Suzuki; Yushin Sasaki; Kojiro Itoh; Akira Tamura; Satoru Maruyama; Shigeru Moriya; Tetsuya Kitagawa

doi:10.1117/12.557822

20 August 2004 A novel approach to the mask inspection for proximity electron lithography based on electron beam imaging

Kazuya Iwase, Shinji Omori, Shoji Nohama, Kenta Yotsui, Gaku Suzuki, Yushin Sasaki, Kojiro Itoh, Akira Tamura, Satoru Maruyama, Shigeru Moriya, Tetsuya Kitagawa

Author Affiliations +

Proceedings Volume 5446, Photomask and Next-Generation Lithography Mask Technology XI; (2004) https://doi.org/10.1117/12.557822
Event: Photomask and Next Generation Lithography Mask Technology XI, 2004, Yokohama, Japan

Abstract

We report the first evaluation results for the printability and detectability of mask defects on a 1x stencil mask as used for proximity electron lithography (PEL). The defect printability has been defined for the patterns after the multi-step etching process through the tri-layer resist system inherently required for the use of low-energy electrons and the substrate. According to the three-dimensional lithography simulation, this definition is preferable to the conventional one based on the resist patterns prior to the etching process in the point that smoothing effects on defects are automatically taken into account. The critical size of printable defects as defined is 22 nm for 140 nm contact holes, while the stringent value of 16 nm is predicted in the conventional definition. Also, the detectability of the printable defects has been assessed by using the transmission electron-beam (EB) inspection tool. The assessment has been performed for both programmed defects and real defects occurred in contact-hole arrays. For the programmed defects, the perfect repeatability has been demonstrated for all the defects with printable sizes. In addition, real defects with the size of 15 nm have been successfully detected in the contact-hole arrays. Therefore, this study has demonstrated the manufacturability of PEL masks from the viewpoint of defect inspection.

Citation Download Citation

Kazuya Iwase, Shinji Omori, Shoji Nohama, Kenta Yotsui, Gaku Suzuki, Yushin Sasaki, Kojiro Itoh, Akira Tamura, Satoru Maruyama, Shigeru Moriya, and Tetsuya Kitagawa "A novel approach to the mask inspection for proximity electron lithography based on electron beam imaging", Proc. SPIE 5446, Photomask and Next-Generation Lithography Mask Technology XI, (20 August 2004); https://doi.org/10.1117/12.557822

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Photomasks

Inspection

Lithography

Defect detection

Electron beam lithography

Etching

Semiconducting wafers

Show All Keywords

Keywords/Phrases

Search In:

Publication Years