Hybrid metrology implementation: server approach

Carmen Osorio; Padraig Timoney; Alok Vaid; Alex Elia; Charles Kang; Cornel Bozdog; Naren Yellai; Eyal Grubner; Toru Ikegami; Masahiko Ikeno

doi:10.1117/12.2087233

19 March 2015 Hybrid metrology implementation: server approach

Carmen Osorio, Padraig Timoney, Alok Vaid, Alex Elia, Charles Kang, Cornel Bozdog, Naren Yellai, Eyal Grubner, Toru Ikegami, Masahiko Ikeno

Author Affiliations +

Proceedings Volume 9424, Metrology, Inspection, and Process Control for Microlithography XXIX; 94241H (2015) https://doi.org/10.1117/12.2087233
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

Hybrid metrology (HM) is the practice of combining measurements from multiple toolset types in order to enable or improve metrology for advanced structures. HM is implemented in two phases: Phase-1 includes readiness of the infrastructure to transfer processed data from the first toolset to the second. Phase-2 infrastructure allows simultaneous transfer and optimization of raw data between toolsets such as spectra, images, traces – co-optimization. We discuss the extension of Phase-1 to include direct high-bandwidth communication between toolsets using a hybrid server, enabling seamless fab deployment and further laying the groundwork for Phase-2 high volume manufacturing (HVM) implementation. An example of the communication protocol shows the information that can be used by the hybrid server, differentiating its capabilities from that of a host-based approach. We demonstrate qualification and production implementation of the hybrid server approach using CD-SEM and OCD toolsets for complex 20nm and 14nm applications. Finally we discuss the roadmap for Phase-2 HM implementation through use of the hybrid server.

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Carmen Osorio, Padraig Timoney, Alok Vaid, Alex Elia, Charles Kang, Cornel Bozdog, Naren Yellai, Eyal Grubner, Toru Ikegami, and Masahiko Ikeno "Hybrid metrology implementation: server approach", Proc. SPIE 9424, Metrology, Inspection, and Process Control for Microlithography XXIX, 94241H (19 March 2015); https://doi.org/10.1117/12.2087233

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KEYWORDS

Metrology

Critical dimension metrology

Semiconducting wafers

Reactive ion etching

Etching

Data processing

Data communications

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