Dr. Athanasios J. Syllaios
Research Professor
SPIE Involvement:
Conference Program Committee | Author | Instructor
Publications (15)

Proceedings Article | 30 September 2022 Presentation + Paper
Ashok Sood, John Zeller, Usha Philipose, A. Syllaios, Latika Chaudhary, Harry Efstathiadis
Proceedings Volume 12234, 122340E (2022) https://doi.org/10.1117/12.2644037
KEYWORDS: Graphene, Microbolometers, Vanadium, Scanning electron microscopy, Silicon, Sputter deposition, Oxides, Long wavelength infrared, Temperature metrology

Proceedings Article | 30 September 2022 Presentation + Paper
M. Harcrow, C. Littler, U. Philipose, B. Western, V. Lopes, A. Syllaios
Proceedings Volume 12234, 1223405 (2022) https://doi.org/10.1117/12.2632758
KEYWORDS: Thin films, Resistance, Data modeling, Temperature metrology, Microbolometers, Vanadium, Solids, Oxygen, Thin film devices, Thermal modeling

Proceedings Article | 14 May 2018 Paper
A. Syllaios, M. Harcrow, B. Western, V. Lopes, C. Littler, Ray Gunawidjaja, Zhi-Gang Yu
Proceedings Volume 10656, 106560E (2018) https://doi.org/10.1117/12.2303728
KEYWORDS: Particles, Amorphous silicon, Temperature metrology, Metals, Microbolometers, Resistance, Nanoparticles, Data modeling, Vanadium, Dielectrics

Proceedings Article | 31 May 2012 Paper
Proceedings Volume 8353, 835317 (2012) https://doi.org/10.1117/12.919708
KEYWORDS: Silicon, Oxygen, Germanium, Silicon films, Thin films, Temperature metrology, Microbolometers, Resistance, Oxides, X-ray diffraction

Proceedings Article | 21 May 2011 Paper
Proceedings Volume 8012, 80121L (2011) https://doi.org/10.1117/12.884249
KEYWORDS: Amorphous silicon, Hydrogen, Staring arrays, Microbolometers, Sensors, Readout integrated circuits, Capacitors, Resistance, Bolometers, Packaging

Showing 5 of 15 publications
Conference Committee Involvement (2)
Infrared Sensors, Devices, and Applications XIV
20 August 2024 | San Diego, California, United States
Infrared Sensors, Devices, and Applications XIII
22 August 2023 | San Diego, California, United States
Course Instructor
SC1326: Microbolometers for Infrared Imaging
Microbolometers are used in Infrared imaging systems in the MWIR to Terahertz spectral range. The goal of this course is to describe in detail the microbolometer device structure, theory of operation, and the associated figures of merit such as the Noise Equivalent Temperature difference (NETD), and thermal time constant. A relevant material parameter is the Temperature Coefficient of Resistance (TCR) that affects the device NETD and dynamic range. Another material/device parameter affecting NETD is the electrical noise comprised of frequency dependent and frequency independent (White noise) components. Thermal Resistance (Rth) also affects the microbolometer NETD and thermal time constant. Rth is a measure of the device thermal isolation by mechanical suspension and by encapsulation in high vacuum. Wafer level or single device vacuum packaging is a major backend process in microbolometer array manufacturing.
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