Dr. Matthias Roesch Profile

Dr. Matthias Roesch

Systems Engineer Imaging at Carl Zeiss SMT GmbH

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Publications (11)

Proceedings Article | 10 April 2024 Poster + Paper

High-NA mask phase-effects studied by AIMS EUV

Matthias Roesch, Grizelda Kersteen, Andreas Verch, Maximilian Albert, Philip Heringlake, Klaus Gwosch, Renzo Capelli

Proceedings Volume 12953, 129531F (2024) https://doi.org/10.1117/12.3010001

KEYWORDS: 3D mask effects, Light sources and illumination, Extreme ultraviolet, Simulations, 3D image processing, Extreme ultraviolet lithography, Reticles, Metrology, Image analysis, Diffraction

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In parallel to the development of EUV lithography equipment and processes towards High-NA there is a still growing interest to study and understand the role of 3D mask absorber driven effects on imaging. Alongside with appropriate exposure and patterning techniques, the choice of a suitable mask absorber material has large impact on the process window optimization. The development of solutions to the challenges combined with the EUV reflective mask typically is based on rigorous imaging simulations, but aerial image metrology can be a supplementary way to verify the role of mask 3D effects on lithography. For that purpose, the ZEISS AIMS EUV actinic mask measurement represents a unique and variously usable way for the qualification of the current as well as the next generation High-NA mask printing performance under scanner-equivalent optical column conditions. In this paper, we show results of AIMS® EUV measurements at Ta-based absorber masks where we identify a significant impact of mask 3D driven phase shifts on the aerial images. For a standard High-NA dipole setting, the intensity profiles of a dense 18 nm vertical lines and spaces structure show an initially unexpected line splitting through focus that can be reproduced by rigorous imaging simulations. In contrast, no splitting is found if the experiment is described within a 2D model. A follow-up experiment on a similar dense vertical 20 nm lines and spaces clip with dedicated monopole illumination demonstrates a prominent asymmetric line splitting for each of the single pole positions, again in accordance with simulation. For a center monopole setting we see a frequency doubling of the aerial image for one particular focus position. To describe the aerial image behavior, we applied an analytical model for three-beam-imaging in the presence of defocus and mask 3D effects. Consequently, the observed through-focus behavior can be explained by various phase shifts to the three-beam imaging cross-terms involved.

Proceedings Article | 22 November 2023 Presentation

ZEISS AIMS EUV high-NA for actinic mask review for the next EUV scanner generation

Klaus Gwosch, Renzo Capelli, Matthias Roesch, Robert Nicholls, Bruno Langbehn, Michael Mohn, Andreas Verch, Maximilian Albert, Grizelda Kersteen, Alexander Winkler, Carolin Müller, Sven Krannich

Proceedings Volume PC12750, PC127500O (2023) https://doi.org/10.1117/12.2687495

KEYWORDS: Extreme ultraviolet lithography, Scanners, Extreme ultraviolet, Imaging systems, Semiconducting wafers, Printing, Photomasks, Metrology, Lithography, Light sources and illumination

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Proceedings Article | 5 October 2023 Paper

Actinic EUV mask qualification for next generation lithography

Matthias Roesch, Renzo Capelli, Lukas Fischer, Klaus Gwosch, Grizelda Kersteen, Carolin Mueller, Robert Nicholls, Andreas Verch, Alexander Winkler

Proceedings Volume 12802, 128020L (2023) https://doi.org/10.1117/12.2681647

KEYWORDS: Metrology, Extreme ultraviolet lithography, Semiconducting wafers, Photomasks, Reticles, Lithography, EUV optics

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Proceedings Article | 1 December 2022 Presentation + Paper

The power of algorithmic employed in a metrology system: AIMS EUV Digital Flex Illu

Renzo Capelli, Klaus Gwosch, Grizelda Kersteen, Matthias Roesch, Carolin Müller, Alexander Winkler, Andreas Verch

Proceedings Volume 12292, 122920N (2022) https://doi.org/10.1117/12.2641531

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Source mask optimization, Photomasks, Metrology, Image processing, Imaging systems, Image acquisition, Digital image processing, Defect inspection

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Proceedings Article | 26 May 2022 Presentation + Paper

AIMS EUV evolution towards high NA: challenge definition and solutions implementation

Renzo Capelli, Grizelda Kersteen, Sven Krannich, Markus Koch, Lukas Fischer, Matthias Roesch, Klaus Gwosch

Proceedings Volume 12051, 120510A (2022) https://doi.org/10.1117/12.2612261

KEYWORDS: Photomasks, Extreme ultraviolet, Scanners, Extreme ultraviolet lithography, Semiconducting wafers, Imaging systems, Metrology, Optics manufacturing, EUV optics, Source mask optimization

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Proceedings Article | 29 August 2019 Paper

High-NA EUV imaging: challenges and outlook

Bartosz Bilski, Jörg Zimmermann, Matthias Roesch, Jack Liddle, Eelco van Setten, Gerardo Bottiglieri, Jan van Schoot

Proceedings Volume 11177, 111770I (2019) https://doi.org/10.1117/12.2536329

KEYWORDS: Lithography, Extreme ultraviolet, Projection systems, Diffraction, Extreme ultraviolet lithography, Scanners, EUV optics, Lithographic illumination, Projection lithography, Optical imaging, Computational lithography

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Proceedings Article | 26 March 2019 Presentation + Paper

High NA EUV lithography: Next step in EUV imaging

Eelco van Setten, Gerardo Bottiglieri, John McNamara, Jan van Schoot, Kars Troost, Joseph Zekry, Timon Fliervoet, Stephen Hsu, Joerg Zimmermann, Matthias Roesch, Bartosz Bilski, Paul Graeupner

Proceedings Volume 10957, 1095709 (2019) https://doi.org/10.1117/12.2514952

KEYWORDS: Source mask optimization, Extreme ultraviolet, Extreme ultraviolet lithography, Scanners, Photomasks, Diffraction

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Proceedings Article | 12 October 2018 Presentation

High-NA EUV lithography: The next step in EUV imaging (Conference Presentation)

Eelco van Setten, John McNamara, Jan van Schoot, Gerardo Bottiglieri, Kars Troost, Timon Fliervoet, Stephen Hsu, Jörg Zimmermann, Jens-Timo Neumann, Matthias Rösch, Paul Graeupner

Proceedings Volume 10809, 1080910 (2018) https://doi.org/10.1117/12.2502149

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Scanners, Fiber optic illuminators, Transistors, Photomasks, Mirrors, Image resolution

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Proceedings Article | 30 October 2017 Presentation + Paper

Edge placement error control and Mask3D effects in High-NA anamorphic EUV lithography

Eelco van Setten, Gerardo Bottiglieri, Laurens de Winter, John McNamara, Paul Rusu, Jan Lubkoll, Gijsbert Rispens, Jan van Schoot, Jens Timo Neumann, Matthias Roesch, Bernhard Kneer

Proceedings Volume 10450, 104500W (2017) https://doi.org/10.1117/12.2280624

KEYWORDS: Extreme ultraviolet lithography, Nanoimprint lithography, Photomasks, Extreme ultraviolet, Reflectivity, Scanners, Mirrors, Semiconducting wafers, Reticles, Imaging systems

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To enable cost-effective shrink at the 3nm node and beyond, and to extend Moore’s law into the next decade, ASML is developing a new high-NA EUV platform. The high-NA system is targeted to feature a numerical aperture (NA) of 0.55 to extend the single exposure resolution limit to 8nm half pitch. The system is being designed to achieve an on-product-overlay (OPO) performance well below 2nm, a high image contrast to drive down local CD errors and to obtain global CDU at sub-1nm level to be able to meet customer edge placement error (EPE) requirements for the devices of the future. EUV scanners employ reflective Bragg multi-layer mirrors in the mask and in the Projection Optics Box (POB) that is used to project the mask pattern into the photoresist on the silicon wafer. These MoSi multi-layer mirrors are tuned for maximum reflectivity, and thus productivity, at 13.5nm wavelength. The angular range of incident light for which a high reflectivity at the reticle can be obtained is limited to ~ +/- 11o, exceeding the maximum angle occurring in current 0.33NA scanners at 4x demagnification. At 0.55NA the maximum angle at reticle level would extend up to 17o in the critical (scanning) direction and compromise the imaging performance of horizontal features severely. To circumvent this issue a novel anamorphic optics design has been introduced, which has a 4x demagnification in the X- (slit) direction and 8x demagnification in the Y- (scanning) direction as well as a central obscuration in the exit pupil. In this work we will show that the EUV high-NA anamorphic concept can successfully solve the angular reflectivity issues and provide good imaging performance in both directions. Several unique imaging challenges in comparison to the 0.33NA isomorphic baseline are being studied, such as the impact of the central obscuration in the POB and Mask-3D effects at increased NA that seem most pronounced for vertical features. These include M3D induced contrast loss and non-telecentricity. We will explore the solutions needed to mitigate these effects and to offer high quality imaging to be able to meet the required EPE performance in both orientations.

Proceedings Article | 4 September 2015 Paper

Imaging performance of the EUV high NA anamorphic system

Koen van Ingen Schenau, Gerardo Bottiglieri, Jan van Schoot, Jens-Timo Neumann, Matthias Roesch

Proceedings Volume 9661, 96610S (2015) https://doi.org/10.1117/12.2195476

KEYWORDS: Photomasks, Imaging systems, Extreme ultraviolet, Nanoimprint lithography, Reticles, Semiconducting wafers, Electroluminescence, Ions, Nickel, Logic

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Proceedings Article | 16 March 2015 Paper

Imaging performance of EUV lithography optics configuration for sub-9nm resolution

Jens Timo Neumann, Matthias Rösch, Paul Gräupner, Sascha Migura, Bernhard Kneer, Winfried Kaiser, Koen van Ingen Schenau

Proceedings Volume 9422, 94221H (2015) https://doi.org/10.1117/12.2175658

KEYWORDS: Reticles, Imaging systems, Semiconducting wafers, Photomasks, Diffraction, Lithography, Extreme ultraviolet lithography, Image resolution, Source mask optimization, EUV optics

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Showing 5 of 11 publications

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