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Here, we demonstrate for the first-time femtosecond pulse amplification on an integrated photonic chip. Our approach translates the concept of chirped pulse amplification to the chip level. Specifically, we leverage tailored all-normal dispersion, large mode-area gain waveguides to realize a low-nonlinearity, high-gain, short-length optical amplifier in which pulse propagation is dominated by dispersion. We show more than 17dB amplification of ultrashort pulses from a 1 GHz femtosecond source at center wavelength of 1815 nm. The amplified pulses have an on-chip output pulse peak power of 800 W with a pulse duration of 116 fs.
To date, the demonstrated integrated devices in rare-earth ion doped potassium double tungstates have shown very promising results, including high gain in on-chip amplifiers and high efficiency and output power in on-chip lasers. These devices, however, were fabricated using low refractive index contrast waveguides, which are not suitable for ring resonators or to achieve anomalous dispersion. High refractive index contrast KY(WO4)2 waveguides with high confinement are therefore needed as building blocks for active devices.
In this work, pedestal disk resonators are proposed, based on a combination of swift ion irradiation, focused ion beam milling and a novel wet etching process. In-coupling of light into the first fabricated pedestal disks will be presented.
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