Paper
28 August 2003 Alignment accuracy of LEEPL: image placement error correction
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Abstract
The placement-error correction for low-energy electron-beam proximity-projection lithography (LEEPL) has been demonstrated to enable the overlay accuracy of 23 nm that meets the requirement for the 65-nm node. The overlay accuracy for LEEPL-ArF mix-and-match lithography has been analyzed, focusing separately on the intra-field error, the inter-field error, and the dynamic fluctuation over different wafers. It has been found that the intra-field error, mainly due to the distortion of a 1x stencil mask, can be effectively corrected for by using the fine deflection of the electron beam, a unique capability of the LEEPL exposure equipment. In addition, the inter-field error can be suppressed by correcting in real time for the magnification error of each chip detected by the die-by-die alignment system. The dynamic variation in the total overlay error is also small, and the overall alignment accuracy is fairly compatible with the preliminary overlay budget.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shinichiro Nohdo, Tomonori Motohashi, Nobuo Shimazu, Hiroyuki Nakano, Shinji Omori, Tetsuya Kitagawa, and Shigeru Moriya "Alignment accuracy of LEEPL: image placement error correction", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504067
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Photomasks

Charged-particle lithography

Semiconducting wafers

Lithography

Optical alignment

Distortion

Overlay metrology

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