Mr. Hidetoshi Ohnuma Profile

Hidetoshi Ohnuma

Deputy General Manager at Sony Corp

SPIE Involvement:

Author

Publications (27)

Proceedings Article | 15 May 2007 Paper

New OPC method for contact layer to expand process margin

Mikio Oka, Hidetoshi Oishi, Kensuke Tsuchiya, Hidetoshi Ohnuma

Proceedings Volume 6607, 660732 (2007) https://doi.org/10.1117/12.729021

KEYWORDS: Optical proximity correction, Critical dimension metrology, Image processing, Lithography, Semiconductors, Optical calibration, Photomasks, Resolution enhancement technologies, Photoresist processing

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Proceedings Article | 14 May 2007 Paper

New method to estimate systematic yield caused by lithography manufacturability

Hidetoshi Oishi, Mikio Oka, Kensuke Tsuchiya, Kazuhisa Ogawa, Hidetoshi Ohnuma

Proceedings Volume 6607, 660719 (2007) https://doi.org/10.1117/12.728957

KEYWORDS: Optical proximity correction, Metals, Design for manufacturing, Lithography, Manufacturing, Failure analysis, Yield improvement, Image processing, Error analysis, Photomasks

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Proceedings Article | 21 March 2007 Paper

OPC to reduce variability of transistor properties

Kaoru Koike, Kohichi Nakayama, Kazuhisa Ogawa, Hidetoshi Ohnuma

Proceedings Volume 6521, 65210J (2007) https://doi.org/10.1117/12.711812

KEYWORDS: Transistors, Optical proximity correction, Ions, Distortion, Process modeling, Lithography, Semiconducting wafers, Manufacturing, Semiconductors, Statistical analysis

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Proceedings Article | 20 May 2006 Paper

Optimization of layout design and OPC by using estimation of transistor properties

Kaoru Koike, Kohichi Nakayama, Kazuhisa Ogawa, Hidetoshi Ohnuma

Proceedings Volume 6283, 62830P (2006) https://doi.org/10.1117/12.681850

KEYWORDS: Transistors, Optical proximity correction, Ions, Distortion, Semiconducting wafers, Lithography, Design for manufacturability, Device simulation, Photomasks, Design for manufacturing

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Proceedings Article | 20 May 2006 Paper

Robust OPC technique using aerial image parameter

Mikio Oka, Shinichiro Suzuki, Kazuyoshi Kawahara, Kensuke Tsuchiya, Kazuhisa Ogawa, Hidetoshi Ohnuma

Proceedings Volume 6283, 628333 (2006) https://doi.org/10.1117/12.681821

KEYWORDS: Optical proximity correction, SRAF, Image processing, Lithography, Resolution enhancement technologies, Model-based design, Scanning electron microscopy, Photomasks, Printing, Semiconductors

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Proceedings Article | 5 November 2005 Paper

The photomask technologies in hyper-NA lithography

Hidehiro Watanabe, Hidetoshi Ohnuma

Proceedings Volume 5992, 599215 (2005) https://doi.org/10.1117/12.638794

KEYWORDS: Lithography, Photomasks, Immersion lithography, Photomask technology, Silicon, Manufacturing, Electronic design automation, 193nm lithography, Polarization, Resolution enhancement technologies

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Proceedings Article | 28 June 2005 Paper

An extension method of metal layer layout in mask data preparation for robust processes

Kensuke Tsuchiya, Kazuhisa Ogawa, Satomi Nakamura, Kazuyoshi Kawahara, Hidetoshi Oishi, Hidetoshi Ohnuma

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617135

KEYWORDS: Optical proximity correction, Photomasks, Metals, Printing, Semiconductors, SRAF, Lithography, Scanners, Design for manufacturing, Design for manufacturability

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Proceedings Article | 20 August 2004 Paper

Structure and data processing for PEL mask compatible with image placement accuracy in the 65-nm node and beyond

Kohichi Nakayama, Kensuke Tsuchiya, Shinji Omori, Hidetoshi Ohnuma

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557776

KEYWORDS: Data processing, Photomasks, Chemical elements, Error analysis, Finite element methods, Electron beam lithography, Distortion, Lithography, Computer simulations, Image processing

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Proceedings Article | 20 August 2004 Paper

Advanced mask pattern correction method of alternating PSM: improvement of line width uniformity in the shifter length direction

Masamichi Yoshida, Ken Ozawa, Kazuhisa Ogawa, Hidetoshi Ohnuma

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557800

KEYWORDS: Optical proximity correction, Distortion, Image segmentation, Model-based design, Critical dimension metrology, Phase shifts, Photomasks, Semiconducting wafers, Resolution enhancement technologies, Wafer-level optics

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SPIE Journal Paper | 1 July 2004

Progress in proximity electron lithography: demonstration of print and overlay performance using the low-energy electron beam proximity-projection lithography β-tool

Shinji Omori, Shinichiro Nohdo, Shoji Nohama, Kouichi Nakayama, Kazuya Iwase, Tomonori Motohashi, Keiko Amai, Yoko Watanabe, Kazuharu Inoue, Isao Ashida, Hidetoshi Ohnuma, Hiroyuki Nakano, Shigeru Moriya, Tetsuya Kitagawa

JM3, Vol. 3, Issue 03, (July 2004) https://doi.org/10.1117/12.10.1117/1.1759326

KEYWORDS: Photomasks, Semiconducting wafers, Lithography, Overlay metrology, Charged-particle lithography, Optical alignment, Metrology, Distortion, Critical dimension metrology, Electron beam lithography

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Proceedings Article | 28 May 2004 Paper

Integrated OPC approach to line-end shortening effects on the photomask and silicon levels for ArF attenuated PSM lithography

Shunichiro Sato, Ken Ozawa, Mikio Katsumata, Hidetoshi Ohnuma

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.533987

KEYWORDS: Photomasks, Optical proximity correction, Semiconducting wafers, Lithography, Cadmium, Silicon, Critical dimension metrology, Wafer-level optics, Optical calibration, Diffractive optical elements

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Proceedings Article | 28 August 2003 Paper

Complementary splitting with stress emulation for stencil masks

Kohichi Nakayama, Kazuharu Inoue, Isao Ashida, Shinji Omori, Hidetoshi Ohnuma

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504071

KEYWORDS: Photomasks, Finite element methods, Charged-particle lithography, Lithography, Semiconducting wafers, Liquids, Algorithm development, Silicon, Safety, Semiconductors

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Proceedings Article | 28 August 2003 Paper

Phase defect printability of alternating phase shift masks for ArF lithography

Nobuyuki Ohba, Kiichi Ishikawa, Mikio Katsumata, Hidetoshi Ohnuma

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504285

KEYWORDS: Photomasks, Semiconducting wafers, Inspection, Phase shifts, Printing, Lithography, 3D modeling, Optical lithography, Manufacturing, Data modeling

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Proceedings Article | 26 June 2003 Paper

Impact of inter-mask CD error on OPC accuracy in resolution of 90 nm and below

Ken Ozawa, Shunichiro Sato, Hidetoshi Ohnuma

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485380

KEYWORDS: Photomasks, Optical proximity correction, Cadmium, Semiconducting wafers, Critical dimension metrology, Scanners, Calibration, Lithography, Phase shifts, Diffusion

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Proceedings Article | 1 August 2002 Paper

Data processing for LEEPL mask: splitting and placement correction

Isao Ashida, Shinji Omori, Hidetoshi Ohnuma

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476997

KEYWORDS: Photomasks, Charged-particle lithography, Chemical elements, Data processing, Lithography, Distortion, Finite element methods, Image processing, Optical lithography, Data conversion

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Proceedings Article | 1 August 2002 Paper

Defect printability of ArF alternative phase-shift mask: a critical comparison of simulation and experiment

Ken Ozawa, Tooru Komizo, Hidetoshi Ohnuma

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476977

KEYWORDS: Photomasks, Phase shifts, Critical dimension metrology, Quartz, Semiconducting wafers, Dry etching, Phase measurement, Photoresist processing, Wet etching, Optical lithography

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Proceedings Article | 30 July 2002 Paper

Defect printability of alternating phase-shift mask: a critical comparison of simulation and experiment

Ken Ozawa, Tooru Komizo, Koji Kikuchi, Hidetoshi Ohnuma, Hiroichi Kawahira

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474479

KEYWORDS: Photomasks, Optical lithography, Chromium, Quartz, Critical dimension metrology, Fiber reinforced polymers, Phase shifts

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Proceedings Article | 12 July 2002 Paper

New method for reducing across-chip poly-CD variation with statistical OPC/gauge capability analysis

Hidetoshi Ohnuma, Koji Kikuchi, Hiroichi Kawahira

Proceedings Volume 4692, (2002) https://doi.org/10.1117/12.475672

KEYWORDS: Optical proximity correction, Statistical analysis, Microelectronics, Lithium, Picosecond phenomena, Optical calibration, Logic devices

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Proceedings Article | 11 March 2002 Paper

Quantitative evaluation of focused ion-beam repair for quartz bump defect of alternating phase-shift masks

Daichi Kakuta, Ichiro Kagami, Tooru Komizo, Hidetoshi Ohnuma

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458358

KEYWORDS: Quartz, Etching, Photomasks, Visibility, Ion beams, Transmittance, Imaging systems, Lithography, Gallium, Semiconducting wafers

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Proceedings Article | 11 March 2002 Paper

New method for reducing across chip poly-CD variation with statistical OPC/gauge capability analysis

Hidetoshi Ohnuma, Koji Kikuchi, Hiroichi Kawahira

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458311

KEYWORDS: Optical proximity correction, Critical dimension metrology, Statistical analysis, Lithography, Photomasks, Logic devices, Logic, Control systems, Optical calibration, Composites

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Proceedings Article | 5 September 2001 Paper

New optimization method of exposure with alternative phase-shifting masks

Koji Kikuchi, Hidetoshi Ohnuma, Hiroichi Kawahira

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438397

KEYWORDS: Photomasks, Logic devices, Phase shifting, Phase shifts, Quartz, Mask making, Lithography, Optical proximity correction, Fabrication, Excimer lasers

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Proceedings Article | 5 July 2000 Paper

Method of expanding process window for the double exposure technique with alt-PSMs

Koji Kikuchi, Hidetoshi Ohnuma, Hiroichi Kawahira

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.388947

KEYWORDS: Photomasks, Logic, Optical proximity correction, Binary data, Chromium, Phase shifting, Lithography, Mask making, Critical dimension metrology, Excimer lasers

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Proceedings Article | 1 September 1998 Paper

Automatic alternative phase-shift mask CAD layout tool for gate shrinkage of embedded DRAM in logic below 0.18 um

Hidetoshi Ohnuma, Hiroichi Kawahira

Proceedings Volume 3412, (1998) https://doi.org/10.1117/12.328802

KEYWORDS: Photomasks, Logic, Phase shifts, Computer aided design, Lithography, Binary data, Double patterning technology, Logic devices, Excimer lasers, Databases

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Proceedings Article | 28 July 1997 Paper

New mask data processing system for ULSI fabrication

Ryuji Takenouchi, Hidetoshi Ohnuma, Isao Ashida, Satoru Nozawa

Proceedings Volume 3096, (1997) https://doi.org/10.1117/12.277293

KEYWORDS: Databases, Photomasks, Data processing, Data conversion, Optical proximity correction, Parallel processing, Optical calibration, Geometrical optics, Electron beams

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Proceedings Article | 28 July 1997 Paper

Fast chip-level OPC system on mask database

Hidetoshi Ohnuma, Keisuke Tsudaka, Hiroichi Kawahira

Proceedings Volume 3096, (1997) https://doi.org/10.1117/12.277249

KEYWORDS: Optical proximity correction, Databases, Photomasks, Data corrections, Data processing, Logic, Raster graphics, Optical calibration, Process control, Printing

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Proceedings Article | 8 December 1995 Paper

Fast EB-PEC system for 0.25-um device reticle fabrication using a variable shaped beam machine

Manabu Tomita, Hidetoshi Ohnuma, Masaaki Koyama, Hiroichi Kawahira

Proceedings Volume 2621, (1995) https://doi.org/10.1117/12.228209

KEYWORDS: Reticles, Data processing, Scattering, Parallel processing, Photomasks, Algorithm development, Data corrections, Optical proximity correction, Modulation

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Proceedings Article | 3 July 1995 Paper

EB proximity effect correction system for 0.25-um device reticle fabrication

Manabu Tomita, Hidetoshi Ohnuma, Masaaki Koyama, Hiroichi Kawahira

Proceedings Volume 2512, (1995) https://doi.org/10.1117/12.212789

KEYWORDS: Reticles, Scattering, Data processing, Modulation, Parallel processing, Data corrections, Photomasks, Semiconducting wafers, Algorithm development

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Showing 5 of 27 publications

Conference Committee Involvement (3)

Photomask and Next Generation Lithography Mask Technology XIV

17 April 2007 | Yokohama, Japan

Photomask and Next-Generation Lithography Mask Technology XIII

18 April 2006 | Yokohama, Japan

Photomask and Next-Generation Lithography Mask Technology XI

14 April 2004 | Yokohama, Japan

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