The Laser-assisted Discharge-produced Plasma (LDP) EUV source is a system to generate EUV from discharged plasma triggered by laser on one electrode disc which is coated by tin film. The source has been proven as a highly reliable light source in EUVL high volume production. Also, LDP EUV source enables to generate high brightness with relatively larger EUV plasma, which benefits space stability as well as relatively larger plasma power. In this session, the following items will be presented. (1) LDP EUV source configuration and operation sequence. (2) LDP EUV source key performance (3) Stability Improvement (4) Reliability improvement. (5) Sample exposure application
The Laser-assisted Discharge-produced Plasma (LDP) EUV source is a system to generate EUV from discharged plasma triggered by laser on one electrode disc which is coated by tin film. The source has been proven as a highly reliable light source in EUVL high volume production. Also, LDP EUV source enables to generate high brightness with relatively larger EUV plasma, which benefits space stability as well as relatively higher plasma power. In this session, the following items will be presented. (1) LDP EUV source configuration and operation sequence. (2) LDP EUV source key performance (3) Reliability improvement. (4) Others.
The most critical enabler of actinic patterned mask inspection technology/capability has been the EUV source. In this paper, we discuss the performance and reliability improvements achieved for the LDP EUV Source (Laser-assisted Discharge Produced Plasma EUV Source) used in Intel actinic patterned-mask inspection systems. These improvements encompass several critical aspects such as EUV emission conversion efficiency, source lifetime and debris mitigation effectiveness. Optimization of the parameters that influence LDP discharge has enabled improvement to these performance indicators. Duration of continuous operation of the source has been extended by novel modification of the electrode design as well as other changes. Ion induced damage to the optical components such as downstream mirrors was mitigated by development of an effective debris mitigation approach. These improvements have significantly increased the duration of uninterrupted operation, EUV brightness level, as well as improvements in plasma stability.
The Laser-assisted Discharge-produced Plasma (LDP) EUV source has been developed as a light source for actinic mask inspection and is currently deployed in the field. As the EUVL process is used more in the mass-production process, the requirement for EUV source for mask inspection is required more. LDP source enables the generation of high brightness with relatively large EUV plasma to fulfill these requirements. Ushio LDP source has overcome various issues specialized from LDP source and realized high reliability 24/7 based operation with high brightness maintained. In this paper, we address the followings: (1) LDP source configuration and its monitoring system, (2) Features of LDP source for inspection purposes, (3) Recent availability in the field, (4) Improvement of source stability and cleanliness, and (5) Roadmap of source availability.
The Laser-assisted Discharge-produced Plasma (LDP) EUV source has been developed as a light source for actinic mask inspection and beamline application and deployed in the field. LDP EUV source enables to generate high brightness with relatively larger EUV plasma by discharged plasma triggered by laser on one electrode disc which is coated by tin film. As EUVL process is used more in mass-production process, the requirement for EUV source for mask inspection is required more. USHIO LDP source has overcome various issues specialized from LDP source and realized high reliability 24/7 based operation with high brightness maintained. In this session, the following items will be presented. (1) LDP EUV source configuration and operation sequence. (2) LDP EUV source key performance (3) Reliability improvement items. (4) High Brightness Development
The Laser-assisted Discharge-produced Plasma (LDP) EUV source has been developed as a light source for actinic mask inspection and beamline application and deployed in the field. LDP EUV source enables to generate high brightness with relatively larger EUV plasma by discharged plasma triggered by laser on one electrode disc which is coated by tin film.
As EUVL process is used more in mass-production process, the requirement for EUV source for mask inspection is required more. USHIO LDP source has overcome various issues specialized from LDP source and realized high reliability 24/7 based operation with high brightness maintained.
The Laser-assisted discharge-produced (LDP) plasma EUV source was developed as a light source for actinic mask inspection and beamline application. Since the focused laser irradiation is used to ignite the discharge, the LDP plasma has a unique feature of high brightness and high power. It can be operated at the frequency of up to 10 kHz generating <200 W/mm2/sr in-band EUV brightness at plasma. The source reliability is also proven in the field as a source for actinic mask inspection. In the paper, the key performances of the LDP source will be discussed.
Improved lithography resolution provided by EUVL simplifies the patterning process and makes it possible to use less restrictive design rules. This in turn enables cost effective scaling with extendibility. There are several technical challenges and infrastructure gaps that need to be resolved to make EUVL suitable for high volume manufacturing (HVM). These gaps relate to development of a stable and reliable high power EUV source, EUV resist and EUV compatible photomask infrastructure. Realization of Actinic patterned mask inspection (APMI) capability is a critical component of the required Photomask infrastructure [1,2]. Most critical enabler of actinic patterned mask inspection technology/capability has been the EUV source. In this contribution, we will discuss key aspects of the developed High-Volume Manufacturing (HVM) worthy LPD EUV source for APMI. These include performance aspects such as brightness and spatial position stability of the EUV emission, dynamics of the EUV-emitting plasma and long-term stability of the source
High-throughput actinic mask inspection tools are needed as EUVL begins to enter into volume production phase. One of the key technologies to realize such inspection tools is a high-radiance EUV source of which radiance is supposed to be as high as 100 W/mm2/sr. Ushio is developing laser-assisted discharge-produced plasma (LDP) sources. Ushio’s LDP source is able to provide sufficient radiance as well as cleanliness, stability and reliability. Radiance behind the debris mitigation system was confirmed to be 120 W/mm2/sr at 9 kHz and peak radiance at the plasma was increased to over 200 W/mm2/sr in the recent development which supports high-throughput, high-precision mask inspection in the current and future technology nodes. One of the unique features of Ushio’s LDP source is cleanliness. Cleanliness evaluation using both grazing-incidence Ru mirrors and normal-incidence Mo/Si mirrors showed no considerable damage to the mirrors other than smooth sputtering of the surface at the pace of a few nm per Gpulse. In order to prove the system reliability, several long-term tests were performed. Data recorded during the tests was analyzed to assess two-dimensional radiance stability. In addition, several operating parameters were monitored to figure out which contributes to the radiance stability.
The latest model that features a large opening angle was recently developed so that the tool can utilize a large number of debris-free photons behind the debris shield. The model was designed both for beam line application and high-throughput mask inspection application. At the time of publication, the first product is supposed to be in use at the customer site.
High-throughput and -resolution actinic mask inspection tools are needed as EUVL begins to enter into volume production phase. To realize such inspection tools, a high-radiance EUV source is necessary. Ushio’s laser-assisted discharge-produced plasma (LDP) source is able to meet industry’s requirements in radiance, cleanliness, stability and reliability. Ushio’s LDP source has shown the peak radiance at plasma of 180 W/mm2/sr and the area-averaged radiance in a 200-μm-diameter circle behind the debris mitigation system of 120 W/mm2/sr. A new version of the debris mitigation system is in testing phase. Its optical transmission was confirmed to be 73 %, which is 4 % lower than that of the previous version and therefore will be improved. Cleanliness of the system is evaluated by exposing Ru mirrors placed behind the debris mitigation system. Ru sputter rate was proven to be sufficiently low as 3~5 nm/Gpulse at 7 kHz, whereas frequency-dependent sputter rate was 1~3 nm/Gpulse at 5~9 kHz as previously reported. Sn deposition remained very low (< 0.05 nm) and did not grow over time. A new technique to suppress debris was tested and preliminary results were promising. Time-of-flight signal of fast ions was completely suppressed and Ru sputter rate of exposed mirrors at 3 kHz was approximately 1.3 nm/Gpulse, whereas the conventional mitigation system (new version) resulted in Ru sputter rate of 0.7 nm/Gpulse. This new technique also allows increasing the radiance efficiency by 30 %. Stability tests were done at several different discharge frequencies. Pulse energy stability was approximately 10 %. Dose energy stability dropped from approximately 2 % to 0.1 % when feedback control was activated. EUV emission position stability was studied at 3 kHz. Deviation of the plasma center of gravity was 6 μm, which is 3 % of plasma diameter and therefore considered to be negligible. Reliability tests were performed on both R and D and prototype machines and up to 200 hours of non-interrupted operation was demonstrated.
Actinic mask inspection manufactures are currently searching for high-radiance EUV sources for their tools. LDP source, which was previously used for lithography purposes, was found to be a good candidate as it can provide sufficient power and radiance. Introduction of new techniques, modified modules and fine tuning of operational conditions (discharge pulse energy, discharge frequency, laser) has brought radiance level to 180 W/mm2/sr at plasma or 145 W/mm2/sr as clean-photon. The source has been modified in such a way to improve modules reliability, lifetime and radiance stability even though there is still a room for further improvement. Size of the source system is much smaller than that of the lithography source. A debris mitigation system has been tested. Optical transmission was improved to 77 % and several 8-nm-thick Ru samples were exposed to evaluate contamination and erosion of optics. Preliminary results show low sputter and deposition rates, which supports sufficiently long lifetime of the optics.
High-radiance EUV source is needed for actinic mask inspection applications. LDP source for a lithography application was found to be also able to provide sufficient radiance for mask inspection purpose. Since the plasma size of LDP is properly larger than LPP, not only radiance but also power is suitable for mask inspection applications. Operating condition such as discharge pulse energy, discharge frequency and laser parameter have been tuned to maximize radiance. Introduction of new techniques and several modifications to LDP source have brought radiance level to 180 W/mm2/sr at plasma (or 130 W/mm2/sr as clean-photon radiance). The LDP source is operated at moderate power level in order to ensure sufficient component lifetime and reliability. The first lifetime test done at 10 kHz resulted in 6.5 Gpulse without failure. Debris mitigation system has been successfully installed showing optical transmission as high as 71 %.
Discharge-produced plasma (DPP)-based EUV source is being developed at Gotenba Branch of EUVA Hiratsuka R&D Center. A high-repetition-rate high voltage power supply (HVPS) was developed and put into operation on the magnetic pulse compression (MPC)-driven DPP source, enabling 8-kHz operation with 15 J/pulse of maximum charging energy and 0.11 % of stability. SnH4 gas was used as a fuel gas in order to obtain high conversion efficiency. SnH4-fueled Z-pinch source demonstrated EUV power of 700 W/2&pgr;sr within 2 % bandwidth around 13.5 nm. Using a nested grazing-incidence collector, EUV power at the intermediate focus which is defined as an interface to the exposure tool reached 62 W with 3.3 mm2sr of etendue. Tin deposition rate on the collector surface, which is the concern in any tin-fueled EUV sources, was decreased by four orders of magnitude as a result of debris-shield development. Cleaning processes were also developed to enhance total lifetime of the collector. A sequence of intentional deposition and cleaning process for the ruthenium grazing-incidence mirror sample was repeated 13 times. By measuring reflectivity of the mirror, it was confirmed that halogen cleaning process worked very effectively and did not get the mirror damaged after such a long-term cleaning experiment.
Discharge-produced plasma (DPP) based EUV source is being developed at Gotenba Branch of EUVA Hiratsuka R&D Center. Among the several kinds of discharge scheme, Z-pinch is employed in our source. An all-solid-state magnetic pulse compression (MPC) generator is used to create a Z-pinch plasma. Low inductance MPC generator is capable of producing a pulsed current with over 50 kA of peak amplitude and about 100 ns of pulse duration at 7 kHz of pulse repetition frequency. In order to obtain sufficient output radiation power, tin-containing gas is being used as well as xenon. Due to the high spectral efficiency of tin, demonstrated EUV output power reached 645 W/2πsr within 2% bandwidth around 13.5 nm. A novel scheme of fuel gas supply led to as good output energy stability as xenon can achieve. Using a nested grazing-incidence collector, EUV power at intermediate focus point which is defined as an interface to the exposure tool reached 42 W with 3.3 mm2sr of etendue.
Discharge-produced plasma (DPP) based EUV source have been studied and developed at EUVA/Gotenba Branch. Among the several kinds of discharge scheme, a capillary Z-pinch has been employed in our source. An all-solid-state magnetic pulse compression (MPC) generator was used to create a Z-pinch plasma. Low inductance MPC generator provides a pulsed current with about 52 kA of peak amplitude and 120 ns of pulse duration, and allows 7-kHz operation. A water-cooled discharge head was coupled with the MPC generator. In order to evaluate the source performance, electrical energy input to the discharge, EUV radiation power, radiation spatial profile, plasma image and spectra were observed. In-band EUV power into usable solid angle obtained at 7 kHz was 93 W/2%BW. By using nested grazing-incidence collector, EUV power at intermediate focus obtained was 19 W/2%BW.
Discharge-produced plasma (DPP) based EUV source have been studied and developed at EUVA/Gotenba Branch. Among the several kinds of discharge scheme, a capillary Z-pinch has been employed in our source. An all-solid-state magnetic pulse compression (MPC) generator was used to create a Z-pinch plasma. Low inductance MPC generator provides a pulsed current with about 17 kA of peak amplitude and 350 ns of pulse duration, and allows 2-kHz continuous operation. A water-cooled discharge head was coupled with the MPC generator. In order to evaluate the source performance, electrical energy input to the discharge, EUV radiation power, radiation spatial profile, pinhole image and spectra were observed. 54.4 W/2%BW of 13.5-nm EUV output was achieved at 2-kHz operation. Through the radiation profile measurement and pinhole-camera observation, spatial image of EUV radiation was understood.
We have used a pair of newly constructed electrodes to improve the discharge stability and electrical input power. The electrode shape was designed so that the discharge width became narrower, which lead to the increase of the input power density by 22%. As a result, the maximum output energy increased from 150 to 200 μJ at 147.8 nm. The pulse duration of 250 ns (FWHM) became shorter compared to the previous result (400 ns). This long pulse operation indicated the laser oscillation in an afterglow mode. The laser beam shape was circular with a beam divergence of 2.5 mrad. Because of the long pulse duration, this beam shape reflected on a cavity mode (multi-mode) as a result of the optical feedback. A small signal gain coefficient increased almost linearly with the increase of the discharge voltage. The maximum gain coefficient at 147.8 nm was 3.5%cm-1 at 31 kV.
We have realized a stable self-sustained discharge of high-pressure rare gases (Ar and Kr) using a compact discharge device. The glow discharge was obtained up to 10 atm of pure Kr. The vacuum ultraviolet emission intensity centered at 148 nm abruptly increased when the charging voltage exceeded a certain value. This "threshold" behavior indicates the onset of the stimulated emission at the wavelength. In addition to this threshold behavior, a considerable spectral narrowing was observed when the charging voltage exceeded the threshold value. The deconvoluted spectral width was 0.5 nm (FWFIM), which was much narrower than that of 4 nm (FWHM) at the charging voltage below the threshold. This significant spectral narrowing also strongly indicates the onset of the stimulated emission at 148 nm.
A 1.5 kW high peak power and 140 ns short pulse krypton excimer lamp in VUV spectral region has been developed using a pulsed silent-discharge. In such a high peak power operation, penning ionization was a dominant destructive process as in the same case of a rare gas excimer laser operation.
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