Dr. Joo-On Park Profile

Dr. Joo-On Park

Project Engineer EUV at SUNY Poly SEMATECH

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Publications (14)

Proceedings Article | 3 April 2010 Paper

Nanoimprint template fabrication using wafer pattern for sub-30nm

In Kim, C. Park, Y. Lee, K. Kim, J. Park, D. Lee, S. Hwang, S. Choi, K. Cho, J. Yeo, B. Lee

Proceedings Volume 7637, 76371R (2010) https://doi.org/10.1117/12.846481

KEYWORDS: Nanoimprint lithography, Semiconducting wafers, Electron beam lithography, Lithography, Line width roughness, Etching, Photomasks, Silicon, Optical lithography, Quartz

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Proceedings Article | 20 March 2010 Paper

The analysis of EUV mask defects using a wafer defect inspection system

Seong-Woon Choi, Kyoung-Yong Cho, Joo-On Park, Chan-Hoon Park, Young-Mi Lee, In-Yong Kang, Gregory Kirk, SungChan Cho, Yeon-Ho Pae, Robert Danen, Changmin Park, Steven Lange, Jeong-Ho Yeo

Proceedings Volume 7636, 76361E (2010) https://doi.org/10.1117/12.846482

KEYWORDS: Semiconducting wafers, Photomasks, Line width roughness, Inspection, Wafer inspection, Scanning electron microscopy, Defect detection, Signal to noise ratio, Extreme ultraviolet lithography, Line edge roughness

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Proceedings Article | 20 March 2010 Paper

A study of defects on EUV masks using blank inspection, patterned mask inspection, and wafer inspection

Byungsup Ahn, Liping Ren, Joo-on Park, David Chan, Iacopo Mochi, Toshio Nakajima, Kenneth Goldberg, Inyong Kang, Sang-in Han, Masahiro Kishimoto, Kyoungyong Cho, Sungmin Huh, Stefan Wurm, Thomas Laursen

Proceedings Volume 7636, 76360K (2010) https://doi.org/10.1117/12.846922

KEYWORDS: Photomasks, Wafer inspection, Inspection, Particles, Extreme ultraviolet, Semiconducting wafers, Extreme ultraviolet lithography, Defect detection, Mask making, High volume manufacturing

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Proceedings Article | 18 March 2010 Paper

Characterization of promising resist platforms for sub-30-nm HP manufacturability and EUV CAR extendibility study

Stefan Wurm, Joo-on Park, Jacque Georger, Frank Goodwin, Chawon Koh, George Huang, Patrick Naulleau, Liping Ren, Warren Montgomery, Bill Pierson, Dominic Ashworth

Proceedings Volume 7636, 763604 (2010) https://doi.org/10.1117/12.846629

KEYWORDS: Optical lithography, Extreme ultraviolet, Manufacturing, Line width roughness, Polymers, Etching, Extreme ultraviolet lithography, Resistance, Glasses, Photoresist processing

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Extreme ultraviolet lithography (EUVL) is the most effective way to print sub-30 nm features. We characterized EUVL readiness of the three major resist platforms for sub-30 nm half-pitch (HP) manufacturability using a full-field ASML alpha demo tool (ADT) scanner and studied the extendibility of EUV chemically amplified resist (CAR). Based on an "M-factor" analysis, which shows the maturity of EUV resist for 28 nm HP manufacturability, a polymer-bound photoacid generator (PAG) resist was 78% ready, a PHS hybrid resist was 81%, and a molecular glass EUV resist was 58%. The polymer-bound resist showed good resolution for 25 nm HP using the ASML ADT. It also demonstrated fair linewidth roughness (LWR) and a good lithographic process margin of 18% exposure latitude (EL) and 160 nm depth of field (DOF) for 28 nm HP patterning compared with the other resist platforms, but its resist collapse and etch resistance need to be improved for manufacturability. PHS hybrid resist showed a fair etch resistance and resist collapse performance compared to the other resist platforms, but LWR needs to be improved. The molecular resist needs to mature further, especially in resist collapse and iso-dense (ID) bias. When considering its many strong points and control of lower acid diffusion, the polymer-bound PAG resist appears to be the most suitable platform for manufacturability and EUV CAR extension. We therefore would like to encourage the development of next generation polymer-bound PAG resist with a higher etch resistance. A process window of 80 nm DOF was demonstrated for 26 nm HP patterning and a measurable DOF for 25 nm HP was achieved with the polymer-bound PAG resist. Resist collapse and LWR are major issues for 22 nm HP patterning in manufacturing. LWR improvements were achieved with various techniques, and resist collapse was greatly improved with a novel approach that uses a residual resist layer. 16 nm HP line/space (L/S) image modulation and 18 nm HP resolution were demonstrated with an EUV CAR, indicating that EUV CAR could be extended to sub-20 nm HP patterning.

Proceedings Article | 18 March 2009 Paper

Assessment of full-chip level EUV optical correction for sub-40nm memory device

Jeonghoon Lee, Jinhong Park, Changmin Park, Joo-on Park, Insung Kim, Woosung Han, Seongwoon Choi, Doohoon Goo, Jeongho Yeo

Proceedings Volume 7271, 727142 (2009) https://doi.org/10.1117/12.813996

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Extreme ultraviolet, Optical proximity correction, Reflectivity, Scanners, Critical dimension metrology, EUV optics, Optical calibration, Cadmium

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Proceedings Article | 18 March 2009 Paper

Assessment of EUV resist readiness for 32-nm hp manufacturing and extendibility study of EUV ADT using state-of-the-art resist

Liping Ren, Chawon Koh, Patrick Naulleau, Frank Goodwin, Joo-On Park, Stefan Wurm, Todd Younkin, Bill Pierson, Tom Wallow, Jacque Georger

Proceedings Volume 7271, 727124 (2009) https://doi.org/10.1117/12.814314

KEYWORDS: Semiconducting wafers, Manufacturing, Extreme ultraviolet lithography, Extreme ultraviolet, Line width roughness, Photoresist processing, Optical lithography, Photomasks, Electroluminescence, Critical dimension metrology

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Proceedings Article | 18 March 2009 Paper

The application of EUV lithography for 40nm node DRAM device and beyond

Doohoon Goo, Jeonghoon Lee, Chawon Koh, Joo-on Park, JeongHo Yeo, Seong-Woon Choi, Chan-hoon Park, JinHong Park, InSung Kim, Changmin Park

Proceedings Volume 7271, 727114 (2009) https://doi.org/10.1117/12.814001

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Etching, Photomasks, Semiconducting wafers, Scanners, Optical proximity correction, Light sources, Resistance

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Proceedings Article | 4 December 2008 Paper

Methodology of flare modeling and compensation in EUVL

Jinhong Park, Jeonghoon Lee, Hoyoung Kang, Jeongho Yeo, Woosung Han, Doohoon Goo, Seong-Woon Choi, Insung Kim, Changmin Park, Joo-On Park

Proceedings Volume 7140, 714009 (2008) https://doi.org/10.1117/12.804673

KEYWORDS: Point spread functions, Fractal analysis, Extreme ultraviolet, Lithography, Optical proximity correction, Photomasks, Critical dimension metrology, Modulation transfer functions, Convolution, Cadmium

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Proceedings Article | 4 December 2008 Paper

CD uniformity improvement for 3x nm node devices

Min-Su Choi, Cheol-Hong Kim, Hyun-Woo Kim, Chang-Min Park, Sung-Woo Hwang, Seong-Woon Choi, Hyun-Byuk Kim, Hyung-Do Kim, Doohoon Goo, Jeongho Yeo, Woo-Sung Han, Joo-On Park

Proceedings Volume 7140, 714024 (2008) https://doi.org/10.1117/12.804627

KEYWORDS: Critical dimension metrology, Semiconducting wafers, Photomasks, Double patterning technology, Lithography, Etching, Semiconductors, Control systems, Spatial resolution, Transistors

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Proceedings Article | 3 April 2008 Paper

Benchmarking of commercial EUVL resists at SEMATECH

Kim Dean, Stefan Wurm, Andy Ma, Joo-on Park, Patrick Naulleau

Proceedings Volume 6921, 69213O (2008) https://doi.org/10.1117/12.775037

KEYWORDS: Line width roughness, Extreme ultraviolet lithography, Extreme ultraviolet, Printing, Scanning electron microscopy, Lithography, Real-time computing, Electroluminescence, Head-mounted displays, Photoresist processing

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Proceedings Article | 3 April 2008 Paper

Advanced extreme ultraviolet resist testing using the SEMATECH Berkeley 0.3-NA microfield exposure tool

Dimitra Niakoula, Patrick Naulleau, Sungmin Huh, Joo-on Park, Kenneth Goldberg, Kim Dean, Brian Hoef, Jerrin Chiu, Christopher Anderson, Andy Ma, Paul Denham, Bruno LaFontaine, Gideon Jones, Tom Wallow

Proceedings Volume 6921, 69213N (2008) https://doi.org/10.1117/12.773833

KEYWORDS: Line edge roughness, Monochromatic aberrations, Extreme ultraviolet, Photomasks, Printing, Lithography, Extreme ultraviolet lithography, Semiconducting wafers, Projection systems, Wafer-level optics

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Proceedings Article | 12 May 2005 Paper

The application criterion of model-based optical proximity correction in a low k1 process

Joo-Tae Moon, Doo-Youl Lee, Myoung-Ho Jung, Joo-On Park, Seok-Hwan Oh, Han-Ku Cho, Sung-Gon Jung, In-Sung Kim, Sang-Gyun Woo

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599013

KEYWORDS: Optical proximity correction, Model-based design, Resolution enhancement technologies, Lithography, Scanning electron microscopy, Photography, Process modeling, Photomasks, Scanners, Semiconducting wafers

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Proceedings Article | 24 May 2004 Paper

Assessments on process parameters' influences to the proximity correction

Gi-Sung Yeo, Woo-Sung Han, Han-Ku Cho, Doo-Youl Lee, Joo-On Park, Soo-Han Choi, Jung-Hyeon Lee, Sung-Woo Lee, Sung-Gon Jung, Eun-Mi Lee

Proceedings Volume 5375, (2004) https://doi.org/10.1117/12.536341

KEYWORDS: Optical proximity correction, Critical dimension metrology, Atrial fibrillation, Cadmium, Resolution enhancement technologies, Data modeling, Logic devices, Photomasks, Line edge roughness, Scanning electron microscopy

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Proceedings Article | 14 September 2001 Paper

Feasibility study of printing sub-100-nm with ArF lithography

Seok-Kyun Kim, Tea-Jun Yoo, Jong-Gyun Hong, Yoon-Suk Hyun, Cheol-Kyu Bok, Ki-Soo Shin, Joo-On Park

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435721

KEYWORDS: Lithography, Resolution enhancement technologies, Photomasks, Printing, Optical lithography, Photoresist processing, Lithographic illumination, Etching, Data modeling, Transistors

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Showing 5 of 14 publications

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