Mr. Naoya Hayashi Profile

Naoya Hayashi

DNP Honorary Fellow at Dai Nippon Printing Co., Ltd.

SPIE Involvement:

Conference Program Committee | Author | Editor

Publications (175)

Proceedings Article | 10 April 2024 Poster

Exploring the potential of EB lithography in EUV photomask manufacturing

Mei Ebisawa, Tsukasa Abe, Yukihiro Fujimura, Izumi Hotei, Masataka Yamaji, Yasutaka Morikawa, Tatsuya Tomita, Naoya Hayashi, Shingo Yoshikawa

Proceedings Volume PC12953, PC1295313 (2024) https://doi.org/10.1117/12.3013224

KEYWORDS: Extreme ultraviolet, Lithography, Photoresist processing, Photomasks, Manufacturing, High volume manufacturing, Extreme ultraviolet lithography, Semiconductors, Logic, Semiconductor manufacturing

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Proceedings Article | 20 December 2023 Paper

Evaluation of EBR-9 resist

Naoya Hayashi

Proceedings Volume 12809, 128090E (2023) https://doi.org/10.1117/12.3011899

KEYWORDS: Standards development, Reticles, Photoresist processing, Opacity, Wet etching, Scanning electron microscopy, Plasma, Photography, Adhesion, Printing

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Proceedings Article | 22 November 2023 Presentation

Ultimate resolution challenge for high-precision EUV mask by using MBMW technology

Shingo Yoshikawa, Tsukasa Abe, Yukihiro Fujimura, Mei Ebisawa, Izumi Hotei, Issei Sakai, Masataka Yamaji, Yasutaka Morikawa, Tatsuya Tomita, Koji Ichimura, Naoya Hayashi

Proceedings Volume PC12751, PC127510U (2023) https://doi.org/10.1117/12.2688952

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Semiconductor manufacturing, Photomasks, Photomask technology, Manufacturing, Lithography, Electron beams

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Proceedings Article | 30 April 2023 Presentation

MBMW (Multi-beam mask writer) : the way of realization for EUV masks for advanced nodes

Naoya Hayashi

Proceedings Volume PC12497, PC1249706 (2023) https://doi.org/10.1117/12.2657583

KEYWORDS: Photomasks, Extreme ultraviolet, Manufacturing, Semiconductors, Extreme ultraviolet lithography, Photoresist processing

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Proceedings Article | 22 February 2021 Presentation

EUV mask process development using MBMW(Multi-beam Mask Writer) for 5nm-node and beyond

Naoya Hayashi

Proceedings Volume 11610, 116100R (2021) https://doi.org/10.1117/12.2583907

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Photoresist processing, Manufacturing, Image processing, Semiconductors, Semiconductor manufacturing, Optical lithography, Nanoimprint lithography

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Proceedings Article | 22 February 2021 Presentation

Nanoimprint template development by new fabrication method and its application

Koji Ichimura, Takaharu Nagai, Kouji Yoshida, Hisayoshi Watanabe, Naoya Hayashi

Proceedings Volume 11610, 116100B (2021) https://doi.org/10.1117/12.2584791

KEYWORDS: Nanoimprint lithography, Lithography, Double patterning technology, Photomasks, Overlay metrology, Fabrication, Ultraviolet radiation, Semiconductors, Semiconducting wafers, Polymers

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Proceedings Article | 22 September 2020 Poster + Presentation

Measurement of cross-sectional profile for sub-15nm hp LS patterns in nanoimprint templates using small-angle x-ray scattering

Kazuki Hagihara, Eiji Yamanaka, Yoshiyasu Ito, Kiyoshi Ogata, Kazuhiko Omote, Naoya Hayashi

Proceedings Volume 11518, 1151810 (2020) https://doi.org/10.1117/12.2572462

KEYWORDS: Nanoimprint lithography, X-rays, Scattering, Scatter measurement, Quartz, Lithography, Semiconductors, Optical lithography, Semiconducting wafers, Photomasks

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Proceedings Article | 19 April 2019 Paper

Throughput improvement method for cross-sectional profile measurement of hole patterns in nanoimprint templates

Kazuki Hagihara, Rikiya Taniguchi, Eiji Yamanaka, Takashi Hirano, Kazuhiko Omote, Yoshiyasu Ito, Kiyoshi Ogata, Naoya Hayashi

Proceedings Volume 10810, 1081010 (2019) https://doi.org/10.1117/12.2503252

KEYWORDS: Nanoimprint lithography, X-rays, Quartz, Diffraction, Scattering, Nanostructures, Scanning electron microscopy, Time metrology, Transmission electron microscopy, X-ray detectors

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Proceedings Article | 12 October 2018 Presentation

Sub-15nm template fabrication with multi-beam mask writer (Conference Presentation)

Koji Ichimura, Koichi Kanno, Masaaki Kurihara, Naoya Hayashi

Proceedings Volume 10810, 108100G (2018) https://doi.org/10.1117/12.2501754

KEYWORDS: Nanoimprint lithography, Photomasks, Lithography, Process control

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Proceedings Article | 12 June 2018 Paper

Fabrication of Ta based absorber EUV mask with SRAF

Keiko Morishita, Kosuke Takai, Kenji Masui, Takashi Kamo, Tsukasa Abe, Yasutaka Morikawa, Naoya Hayashi

Proceedings Volume 10807, 108070F (2018) https://doi.org/10.1117/12.2503150

KEYWORDS: Photomasks, Line width roughness, Extreme ultraviolet, SRAF, Extreme ultraviolet lithography, Tantalum, Scanning electron microscopy, Chromium

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Proceedings Article | 19 March 2018 Presentation

Fabrication of full-field 1z nm template using multi-beam mask writer (Conference Presentation)

Koji Ichimura, Koichi Kanno, Masaaki Kurihara, Naoya Hayashi

Proceedings Volume 10584, 105840P (2018) https://doi.org/10.1117/12.2299778

KEYWORDS: Nanoimprint lithography, Photomasks, Lithography, Semiconductors

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Proceedings Article | 16 October 2017 Presentation + Paper

The capability of measuring cross-sectional profile for hole patterns in nanoimprint templates using small-angle x-ray scattering

Kazuki Hagihara, Rikiya Taniguchi, Eiji Yamanaka, Kazuhiko Omote, Yoshiyasu Ito, Kiyoshi Ogata, Naoya Hayashi

Proceedings Volume 10451, 104510H (2017) https://doi.org/10.1117/12.2284761

KEYWORDS: X-rays, Nanoimprint lithography, Scattering, Quartz, 3D metrology, Critical dimension metrology, 3D acquisition, Scanning electron microscopy, Nanostructures, Ultraviolet radiation

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Proceedings Article | 13 July 2017 Paper

The capability of measuring cross-sectional profile for hole patterns in nanoimprint templates using small-angle x-ray scattering

Kazuki Hagihara, Rikiya Taniguchi, Eiji Yamanaka, Kazuhiko Omote, Yoshiyasu Ito, Kiyoshi Ogata, Naoya Hayashi

Proceedings Volume 10454, 104540Y (2017) https://doi.org/10.1117/12.2280686

KEYWORDS: Nanoimprint lithography, X-rays, Scattering, Quartz, 3D metrology, Scanning electron microscopy, Transmission electron microscopy, Nanostructures, Critical dimension metrology, 3D modeling

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Proceedings Article | 13 July 2017 Paper

The capability of measuring cross-sectional profile for hole patterns in nanoimprint templates using small-angle x-ray scattering

Kazuki Hagihara, Rikiya Taniguchi, Eiji Yamanaka, Kazuhiko Omote, Yoshiyasu Ito, Kiyoshi Ogata, Naoya Hayashi

Proceedings Volume 10454, 104540Y (2017) https://doi.org/10.1117/12.2280686

KEYWORDS: Nanoimprint lithography, X-rays, Scattering, Quartz, 3D metrology, Scanning electron microscopy, Transmission electron microscopy, Nanostructures, Critical dimension metrology, 3D modeling

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Proceedings Article | 27 April 2017 Presentation

Development of nanoimprint lithography templates for the contact hole layer application (Conference Presentation)

Koji Ichimura, Ryugo Hikichi, Saburo Harada, Koichi Kanno, Masaaki Kurihara, Naoya Hayashi

Proceedings Volume 10144, 101440D (2017) https://doi.org/10.1117/12.2263460

KEYWORDS: Printing, Current controlled current source, Nanoimprint lithography, Optical lithography, Lithography, Semiconductors, Electron beam lithography, Extreme ultraviolet lithography, Photomasks, Semiconducting wafers

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Proceedings Article | 18 May 2016 Paper

The measurement capabilities of cross-sectional profile of Nanoimprint template pattern using small angle x-ray scattering

Eiji Yamanaka, Rikiya Taniguchi, Masamitsu Itoh, Kazuhiko Omote, Yoshiyasu Ito, Kiyoshi Ogata, Naoya Hayashi

Proceedings Volume 9984, 99840V (2016) https://doi.org/10.1117/12.2246570

KEYWORDS: Diffraction, Nanoimprint lithography, Quartz, X-rays, Transmission electron microscopy, Scattering, Semiconducting wafers, Lithography, Nondestructive evaluation, Nanostructures

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Nanoimprint lithography (NIL) is one of the most potential candidates for the next generation lithography for semiconductor. It will achieve the lithography with high resolution and low cost. High resolution of NIL will be determined by a high definition template. Nanoimprint lithography will faithfully transfer the pattern of NIL template to the wafer. Cross-sectional profile of the template pattern will greatly affect the resist profile on the wafer. Therefore, the management of the cross-sectional profile is essential. Grazing incidence small angle x-ray scattering (GI-SAXS) technique has been proposed as one of the method for measuring cross-sectional profile of periodic nanostructure pattern. Incident x-rays are irradiated to the sample surface with very low glancing angle. It is close to the critical angle of the total reflection of the x-ray. The scattered x-rays from the surface structure are detected on a two-dimensional detector. The observed intensity is discrete in the horizontal (2θ) direction. It is due to the periodicity of the structure, and diffraction is observed only when the diffraction condition is satisfied. In the vertical (β) direction, the diffraction intensity pattern shows interference fringes reflected to height and shape of the structure. Features of the measurement using x-ray are that the optical constant for the materials are well known, and it is possible to calculate a specific diffraction intensity pattern based on a certain model of the cross-sectional profile. The surface structure is estimated by to collate the calculated diffraction intensity pattern that sequentially while changing the model parameters with the measured diffraction intensity pattern. Furthermore, GI-SAXS technique can be measured an object in a non-destructive. It suggests the potential to be an effective tool for product quality assurance. We have developed a cross-sectional profile measurement of quartz template pattern using GI-SAXS technique. In this report, we will report the measurement capabilities of GI-SAXS technique as a cross-sectional profile measurement tool of NIL quartz template pattern.

Proceedings Article | 10 May 2016 Paper

Etched multilayer EUV mask fabrication for sub-60nm pattern based on effective mirror width

Noriko Iida, Kosuke Takai, Takashi Kamo, Yasutaka Morikawa, Naoya Hayashi

Proceedings Volume 9984, 99840E (2016) https://doi.org/10.1117/12.2242872

KEYWORDS: Extreme ultraviolet, Mirrors, Extreme ultraviolet lithography, Photomasks, Multilayers, Transmission electron microscopy, Image processing, Photoresist processing, Scanning electron microscopy, Radon

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SPIE Journal Paper | 5 February 2016

Development of nanoimprint lithography templates toward high-volume manufacturing

Koji Ichimura, Kouji Yoshida, Saburo Harada, Takaharu Nagai, Masaaki Kurihara, Naoya Hayashi

JM3, Vol. 15, Issue 02, 021006, (February 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.021006

KEYWORDS: Nanoimprint lithography, High volume manufacturing, Image processing, Critical dimension metrology, Lithography, Semiconductors, Semiconducting wafers, Photomasks, Ultraviolet radiation, Liquids

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Proceedings Article | 23 October 2015 Paper

Process capability of etched multilayer EUV mask

Kosuke Takai, Noriko Iida nee Sakurai, Takashi Kamo, Yasutaka Morikawa, Naoya Hayashi

Proceedings Volume 9635, 96351C (2015) https://doi.org/10.1117/12.2197686

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Mask cleaning, Multilayers, Transmission electron microscopy, Image processing, Reflectivity, Inspection, Particles, Neodymium

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Proceedings Article | 19 March 2015 Paper

HVM readiness of nanoimprint lithography templates: defects, CD, and overlay

Koji Ichimura, Kouji Yoshida, Saburo Harada, Takaharu Nagai, Masaaki Kurihara, Naoya Hayashi

Proceedings Volume 9423, 94230D (2015) https://doi.org/10.1117/12.2175483

KEYWORDS: Nanoimprint lithography, Distortion, Image processing, Semiconducting wafers, Overlay metrology, Lithography, Etching, High volume manufacturing, Semiconductors, Photomasks

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Proceedings Article | 21 October 2014 Paper

Performance of GFIS mask repair system for various mask materials

Fumio Aramaki, Tomokazu Kozakai, Osamu Matsuda, Anto Yasaka, Shingo Yoshikawa, Koichi Kanno, Hiroyuki Miyashita, Naoya Hayashi

Proceedings Volume 9235, 92350F (2014) https://doi.org/10.1117/12.2069435

KEYWORDS: Photomasks, Etching, Scanning electron microscopy, Ions, Quartz, Semiconducting wafers, Critical dimension metrology, Phase shifts, Nitrogen

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Proceedings Article | 16 September 2014 Paper

Capability of etched multilayer EUV mask fabrication

Kosuke Takai, Koji Murano, Takashi Kamo, Yasutaka Morikawa, Naoya Hayashi

Proceedings Volume 9235, 923515 (2014) https://doi.org/10.1117/12.2067892

KEYWORDS: Photomasks, Extreme ultraviolet, Lithography, Reflectivity, Scanning electron microscopy, Extreme ultraviolet lithography, Mask making, Projection systems, Ultraviolet radiation, Binary data

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Proceedings Article | 16 September 2014 Paper

Capability of particle inspection on patterned EUV mask using model EBEYE M

Masato Naka, Ryoji Yoshikawa, Shinji Yamaguchi, Takashi Hirano, Masamitsu Itoh, Kenji Terao, Masahiro Hatakeyama, Kenji Watanabe, Hiroshi Sobukawa, Takeshi Murakami, Kiwamu Tsukamoto, Takehide Hayashi, Ryo Tajima, Norio Kimura, Naoya Hayashi

Proceedings Volume 9235, 92350M (2014) https://doi.org/10.1117/12.2069161

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Particles, Scanning electron microscopy, Defect inspection, Defect detection, Image enhancement, Semiconducting wafers, Sensors

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According to the road map shown in ITRS [1], the EUV mask requirement for defect inspection is to detect the defect size of sub- 20 nm in the near future. EB (Electron Beam) inspection with high resolution is one of the promising candidates to meet such severe defect inspection requirements. However, conventional EB inspection using the SEM method has the problem of low throughput. Therefore, we have developed an EB inspection tool, named Model EBEYE M※. The tool has the PEM (Projection Electron Microscope) technique and the image acquisition technique with TDI (Time Delay Integration) sensor while moving the stage continuously to achieve high throughput [2]. In our previous study, we showed the performance of the tool applied for the half pitch (hp) 2X nm node in a production phase for particle inspection on an EUV blank. In the study, the sensitivity of 20 nm with capture rate of 100 % and the throughput of 1 hour per 100 mm square were achieved, which was higher than the conventional optical inspection tool for EUV mask inspection [3]-[5]. Such particle inspection is called for not only on the EUV blank but also on the patterned EUV mask. It is required after defect repair and final cleaning for EUV mask fabrication. Moreover, it is useful as a particle monitoring tool between a certain numbers of exposures for wafer fabrication because EUV pellicle has not been ready yet. However, since the patterned EUV mask consists of 3D structure, it is more difficult than that on the EUV blank. In this paper, we evaluated that the particle inspection on the EUV blank using the tool which was applied for the patterned EUV mask. Moreover, the capability of the particle inspection on the patterned EUV mask for the hp 2X nm node, whose target is 25 nm of the sensitivity, was confirmed. As a result, the inspection and SEM review results of the patterned EUV masks revealed that the sensitivity of the hp 100 nm Line/Space (LS) was 25 nm and that of the hp 140- 160 nm Contact Hole (CH) was 21 nm. Therefore, we confirmed that particle inspection on the patterned EUV mask using Model EBEYE M could be available for the EUV mask of the hp 2X nm node. In the future, we will try to inspect the production mask of the hp 2X nm node, and try to confirm the performance for the EUV mask of the hp 1X nm node.

Proceedings Article | 1 October 2013 Paper

Patterning of EUVL binary etched multilayer mask

Kosuke Takai, Takeharu Motokawa, Koji Murano, Takashi Kamo, Naoya Hayashi

Proceedings Volume 8880, 88802M (2013) https://doi.org/10.1117/12.2033258

KEYWORDS: Photomasks, Etching, Extreme ultraviolet lithography, Binary data, Ruthenium, Tantalum, Lithography, Optical lithography, Photoresist processing, Wafer-level optics

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Proceedings Article | 9 September 2013 Paper

Direct phase-shift measurement of an EUV mask with gradient absorber thickness

Hiroyoshi Tanabe, Tetsunori Murachi, Seh-Jin Park, Eric Gullikson, Tsukasa Abe, Naoya Hayashi

Proceedings Volume 8880, 88801D (2013) https://doi.org/10.1117/12.2031135

KEYWORDS: Extreme ultraviolet, Phase measurement, Photomasks, Reflectivity, Phase shifts, Scattering, Data modeling, Reflectometry, Light scattering, Sensors

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Proceedings Article | 2 August 2013 Paper

Improvement of EUVL mask structure with black border of etched multilayer

Kosuke Takai, Koji Murano, Eiji Yamanaka, Shinji Yamaguchi, Masato Naka, Takashi Kamo, Naoya Hayashi

Proceedings Volume 8701, 87010Y (2013) https://doi.org/10.1117/12.2031582

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Inspection, Extreme ultraviolet, Bridges, Deep ultraviolet, Reflectivity, Lithography, Scanning electron microscopy, Ruthenium

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Proceedings Article | 28 June 2013 Paper

Challenge for under 40nm size pattern making for EUV mask

Tsukasa Abe, Yuichi Inazuki, Yukie Kobayashi, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 8701, 87010R (2013) https://doi.org/10.1117/12.2030183

KEYWORDS: Photomasks, Etching, Extreme ultraviolet, Extreme ultraviolet lithography, Dry etching, Optical lithography, Inspection, Photoresist processing, Chromium, Wet etching

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Proceedings Article | 8 November 2012 Paper

Electron beam inspection of 16nm HP node EUV masks

Takeya Shimomura, Shogo Narukawa, Tsukasa Abe, Tadahiko Takikawa, Naoya Hayashi, Fei Wang, Long Ma, Chia-Wen Lin, Yan Zhao, Chiyan Kuan, Jack Jau

Proceedings Volume 8522, 85220L (2012) https://doi.org/10.1117/12.976017

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Defect detection, Ruthenium, Extreme ultraviolet lithography, Semiconductors, Optical inspection, Reflectivity, Semiconducting wafers

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EUV lithography (EUVL) is the most promising solution for 16nm HP node semiconductor device manufacturing and beyond. The fabrication of defect free EUV mask is one of the most challenging roadblocks to insert EUVL into high volume manufacturing (HVM). To fabricate and assure the defect free EUV masks, electron beam inspection (EBI) tool will be likely the necessary tool since optical mask inspection systems using 193nm and 199nm light are reaching a practical resolution limit around 16nm HP node EUV mask. For production use of EBI, several challenges and potential issues are expected. Firstly, required defect detection sensitivity is quite high. According to ITRS roadmap updated in 2011, the smallest defect size needed to detect is about 18nm for 15nm NAND Flash HP node EUV mask. Secondly, small pixel size is likely required to obtain the high sensitivity. Thus, it might damage Ru capped Mo/Si multilayer due to accumulated high density electron beam bombardments. It also has potential of elevation of nuisance defects and reduction of throughput. These challenges must be solved before inserting EBI system into EUV mask HVM line. In this paper, we share our initial inspection results for 16nm HP node EUV mask (64nm HP absorber pattern on the EUV mask) using an EBI system eXplore® 5400 developed by Hermes Microvision, Inc. (HMI). In particularly, defect detection sensitivity, inspectability and damage to EUV mask were assessed. As conclusions, we found that the EBI system has capability to capture 16nm defects on 64nm absorber pattern EUV mask, satisfying the sensitivity requirement of 15nm NAND Flash HP node EUV mask. Furthermore, we confirmed there is no significant damage to susceptible Ru capped Mo/Si multilayer. We also identified that low throughput and high nuisance defect rate are critical challenges needed to address for the 16nm HP node EUV mask inspection. The high nuisance defect rate could be generated by poor LWR and stitching errors during EB writing of 64nm HP resist pattern. This result suggests we need further improvements not only in the EBI inspection system but also the patterning processes for 16nm HP node EUV masks.

Proceedings Article | 8 November 2012 Paper

Capability of model EBEYE M for EUV mask production

Masato Naka, Shinji Yamaguchi, Motoki Kadowaki, Toru Koike, Takashi Hirano, Masamitsu Itoh, Yuichiro Yamazaki, Kenji Terao, Masahiro Hatakeyama, Kenji Watanabe, Hiroshi Sobukawa, Takeshi Murakami, Kiwamu Tsukamoto, Takehide Hayashi, Ryo Tajima, Norio Kimura, Naoya Hayashi

Proceedings Volume 8522, 85220K (2012) https://doi.org/10.1117/12.964099

KEYWORDS: Inspection, Signal to noise ratio, Extreme ultraviolet, Particles, Photomasks, Performance modeling, Scanning electron microscopy, Defect detection, Image acquisition, Systems modeling

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According to the ITRS Roadmap [1], within a few years the EUV mask requirement for defect will be detection of defect size of less than 25 nm. Electron Beam (EB) inspection is one of the candidates to meet such a severe defect requirement. EB inspection system, Model EBEYE M※1, has been developed for EUV mask inspection. Model EBEYE M employs Projection Electron Microscope (PEM) technique and image acquisition technique to acquire image with Time Delay Integration (TDI) sensor while the stage moves continuously [2]. Therefore, Model EBEYE M has high performance in terms of sensitivity, throughput and cost. In a previous study, we showed the performance of Model EBEYE M for 2X nm in a development phase whose sensitivity in pattern inspection was around 20 nm and in particle inspection was 20 nm with throughput of 2 hours in 100 mm square [3], [4]. With regard to pattern inspection, Model EBEYE M for High Volume Manufacturing (HVM) is currently under development in the production phase. With regard to particle inspection, Model EBEYE M for 2X nm is currently progressing from the development phase to the production phase. In this paper, the particle inspection performance of Model EBEYE M for 2X nm in the production phase was evaluated. Capture rate and repeatability were used for evaluating productivity. The target set was 100% capture rate of 20 nm. 100% repeatability of 20 nm with 3 inspection runs was also set as a target. Moreover, throughput of 1 hour in 100 mm square, which was higher than for Model EBEYE M for 2X nm in the development phase, was set as a target. To meet these targets, electron optical conditions were optimized by evaluating the Signal-to-Noise Ratio (SNR). As a result, SNR of 30 nm PSL was improved 2.5 times. And the capture rate of 20 nm was improved from 21% with throughput of 2 hours to 100% with throughput of 1 hour. Moreover, the repeatability of 20 nm with 3 inspection runs was 100% with throughput of 1 hour. From these results, we confirmed that Model EBEYE M particle inspection mode could be available for EUV mask production.

Proceedings Article | 30 June 2012 Paper

A novel mask proximity correction software combining accuracy and reduced writing time for the manufacturing of advanced photomasks

Patrick Schiavone, Luc Martin, Clyde Browning, Vincent Farys, Frank Sundermann, Shogo Narukawa, Tadahiko Takikawa, Naoya Hayashi

Proceedings Volume 8441, 84411F (2012) https://doi.org/10.1117/12.981609

KEYWORDS: Photomasks, Calibration, Modulation, Manufacturing, Data modeling, Ions, Extreme ultraviolet, Lithography, Scattering, Electroluminescence

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Proceedings Article | 16 April 2012 Paper

Mask readiness for EUVL pilot line

Naoya Hayashi, Tsukasa Abe, Tadahiko Takikawa

Proceedings Volume 8352, 835204 (2012) https://doi.org/10.1117/12.923125

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Inspection, Line edge roughness, Manufacturing, Defect inspection, EUV optics, Printing, Lithography

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Proceedings Article | 14 October 2011 Paper

Performance of EBeyeM for EUV mask inspection

Shinji Yamaguchi, Masato Naka, Takashi Hirano, Masamitsu Itoh, Motoki Kadowaki, Tooru Koike, Yuichiro Yamazaki, Kenji Terao, Masahiro Hatakeyama, Kenji Watanabe, Hiroshi Sobukawa, Takeshi Murakami, Tsutomu Karimata, Kiwamu Tsukamoto, Takehide Hayashi, Ryo Tajima, Norio Kimura, Naoya Hayashi

Proceedings Volume 8166, 81662F (2011) https://doi.org/10.1117/12.898790

KEYWORDS: Inspection, Extreme ultraviolet, Particles, Signal to noise ratio, Optical inspection, Scanning electron microscopy, Sensors, Image quality, Image acquisition, Electron microscopes

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According to the ITRS Roadmap, the EUV mask requirement for 2X nm technology node is detection of defect size of 20 nm. The history of optical mask inspection tools involves continuous efforts to realize higher resolution and higher throughput. In terms of productivity, considering resolution, throughput and cost, we studied the capability of EUV light inspection and Electron Beam (EB) inspection, using Scanning Electron Microscope (SEM), including prolongation of the conventional optical inspection. As a result of our study, the solution we propose is EB inspection using Projection Electron Microscope (PEM) technique and an image acquisition technique to acquire inspection images with Time Delay Integration (TDI) sensor while the stage is continually moving. We have developed an EUV mask inspection tool, EBeyeM, whole design concept includes these techniques. EBeyeM for 2X nm technology node has the following targets, for inspection sensitivity, defects whose size is 20 nm must be detected and, for throughput, inspection time for particle and pattern inspection mode must be less than 2 hours and 13 hours in 100 mm square, respectively. Performance of the proto-type EBeyeM was reported. EBeyeM for 2X nm technology node was remodeled in light of the correlation between Signal to Noise Ratio (SNR) and defect sensitivity for the proto-type EBeyeM. The principal remodeling points were increase of the number of incident electrons to TDI sensor by increasing beam current for illuminating optics and realization of smaller pixel size for imaging optics. This report presents the performance of the remodeled EBeyeM (=EBeyeM for 2X nm) and compares it with that of the proto-type EBeyeM. Performances of image quality, inspection sensitivity and throughput reveal that the EBeyeM for 2X nm is improved. The current performance of the EBeyeM for 2X nm is inspection sensitivity of 20 nm order for both pattern and particle inspection mode, and throughput is 2 hours in 100 mm square for particle inspection mode.

Proceedings Article | 14 October 2011 Paper

Phase-shifting effect of thin-absorber EUV masks

Hiroyoshi Tanabe, Tetsunori Murachi, Sang H. Lee, Manish Chandhok, Seh-Jin Park, Guojing Zhang, Tsukasa Abe, Taichi Ogase, Naoya Hayashi

Proceedings Volume 8166, 816618 (2011) https://doi.org/10.1117/12.895149

KEYWORDS: Photomasks, Phase shifts, Extreme ultraviolet, Reflectivity, Phase shifting, Semiconducting wafers, Refractive index, Lithography, Binary data, Extreme ultraviolet lithography

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Proceedings Article | 14 October 2011 Paper

Effects of cleaning on NIL templates: surface roughness, CD, and pattern integrity

Sherjang Singh, Kenji Onuki, Naoshi Kawamata, Takaharu Nagai, Masaaki Kurihara, Tatsuya Tomita, Naoya Hayashi, Peter Dress, Uwe Dietze

Proceedings Volume 8166, 81662P (2011) https://doi.org/10.1117/12.898649

KEYWORDS: Nanoimprint lithography, Particles, Surface roughness, Critical dimension metrology, Quartz, Photoresist processing, Binary data, Chromium, Silica, Inspection

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Proceedings Article | 22 April 2011 Paper

EB resolution capability with CP exposure

Masaki Kurokawa, Hideaki Isobe, Kenji Abe, Yoshihisa Oae, Akio Yamada, Shogo Narukawa, Mikio Ishikawa, Hiroshi Fujita, Morihisa Hoga, Naoya Hayashi

Proceedings Volume 8081, 80810A (2011) https://doi.org/10.1117/12.897272

KEYWORDS: Photomasks, Semiconducting wafers, Sensors, Quartz, Vestigial sideband modulation, Silicon, Signal detection, Image resolution, Resolution enhancement technologies, Electron beams

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Proceedings Article | 7 April 2011 Paper

Demonstration of defect free EUV mask for 22nm NAND flash contact layer using electron beam inspection system

Takeya Shimomura, Satoshi Kawashima, Yuichi Inazuki, Tsukasa Abe, Tadahiko Takikawa, Hiroshi Mohri, Naoya Hayashi, Fei Wang, Long Eric Ma, Yan Zhao, Chiyan Kuan, Hong Xiao, Jack Jau

Proceedings Volume 7969, 79691B (2011) https://doi.org/10.1117/12.879565

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Extreme ultraviolet lithography, Defect detection, Lithography, Manufacturing, Particles, Electronic components, Opacity

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Proceedings Article | 2 April 2011 Paper

NGL masks: development status and issue

Naoya Hayashi, Tsukasa Abe, Takeya Shimomura, Yuichi Inazuki, Tadahiko Takikawa, Hiroshi Mohri

Proceedings Volume 7985, 798505 (2011) https://doi.org/10.1117/12.896886

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Defect inspection, EUV optics, Reflectivity, Optics manufacturing, Mask cleaning

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Proceedings Article | 29 September 2010 Paper

Development of EB inspection system EBeyeM for EUV mask

Takashi Hirano, Shinji Yamaguchi, Masato Naka, Masamitsu Itoh, Motoki Kadowaki, Tooru Koike, Yuuichiro Yamazaki, Kenji Terao, Masahiro Hatakeyama, Hiroshi Sobukawa, Takeshi Murakami, Kiwamu Tsukamoto, Takehide Hayashi, Kenji Watanabe, Norio Kimura, Naoya Hayashi

Proceedings Volume 7823, 78232C (2010) https://doi.org/10.1117/12.864208

KEYWORDS: Inspection, Extreme ultraviolet, Prototyping, Particles, Photomasks, Optical inspection, Defect inspection, Defect detection, Electron microscopes, Scanning electron microscopy

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Proceedings Article | 25 September 2010 Paper

Study of EUV mask defect repair using FIB method

Tsuyoshi Amano, Noriaki Takagi, Hiroyuki Shigemura, Tsuneo Terasawa, Osamu Suga, Kensuke Shiina, Fumio Aramaki, Anto Yasaka, Yuichi Inazuki, Naoya Hayashi

Proceedings Volume 7823, 782323 (2010) https://doi.org/10.1117/12.864213

KEYWORDS: Photomasks, Extreme ultraviolet, Etching, Cadmium sulfide, Image processing, Scanning electron microscopy, Transmission electron microscopy, Semiconducting wafers, Carbon, Ions

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Proceedings Article | 25 September 2010 Paper

Native pattern defect inspection of EUV mask using advanced electron beam inspection system

Takeya Shimomura, Yuichi Inazuki, Tsukasa Abe, Tadahiko Takikawa, Hiroshi Mohri, Naoya Hayashi, Fei Wang, Long Ma, Yan Zhao, Chiyan Kuan, Hong Xiao, Jack Jau

Proceedings Volume 7823, 78232B (2010) https://doi.org/10.1117/12.868171

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Defect inspection, Bridges, Opacity, Defect detection, Scanning electron microscopy, Optical inspection, Extreme ultraviolet lithography

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Proceedings Article | 25 September 2010 Paper

Investigation of the influence of resist patterning on absorber LWR for 22-nm-node EUV lithography

Yuichi Inazuki, Takeya Shimomura, Tsukasa Abe, Taichi Ogase, Satoshi Kawashima, Tadahiko Takigawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 7823, 78231W (2010) https://doi.org/10.1117/12.869592

KEYWORDS: Line width roughness, Image segmentation, Photomasks, Optical lithography, Extreme ultraviolet lithography, Scanning electron microscopy, Extreme ultraviolet, Semiconducting wafers, Polymers, Optical properties

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Proceedings Article | 11 June 2010 Paper

Short-range electron backscattering from EUV masks

Hiroyoshi Tanabe, Tsukasa Abe, Yuichi Inazuki, Naoya Hayashi

Proceedings Volume 7748, 774823 (2010) https://doi.org/10.1117/12.862641

KEYWORDS: Backscatter, Extreme ultraviolet, Photomasks, Monte Carlo methods, Scattering, Extreme ultraviolet lithography, Multilayers, Tantalum, Chromium, Cadmium sulfide

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Proceedings Article | 27 May 2010 Paper

Characterization of line-width roughness about 22-32nm node EUV mask

Yuichi Inazuki, Tsukasa Abe, Tadahiko Takikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 7748, 774821 (2010) https://doi.org/10.1117/12.867910

KEYWORDS: Line width roughness, Photomasks, Image segmentation, Scanning electron microscopy, Extreme ultraviolet, Semiconducting wafers, Extreme ultraviolet lithography, Standards development, Lithography, Image analysis

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Proceedings Article | 25 May 2010 Paper

Fine pixel SEM image for EUV mask pattern 3D quality assurance based on lithography simulation

Eiji Yamanaka, Masamitsu Itoh, Masaya Kato, Kusuo Ueno, Kyouhei Hayashi, Akira Higuchi, Naoya Hayashi

Proceedings Volume 7748, 774825 (2010) https://doi.org/10.1117/12.868631

KEYWORDS: Scanning electron microscopy, Photomasks, Extreme ultraviolet, Optical proximity correction, Lithography, 3D metrology, Critical dimension metrology, Semiconducting wafers, 3D image processing, Image quality

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Proceedings Article | 11 December 2009 Paper

EUV mask pattern inspection with an advanced electron beam inspection system

Takeya Shimomura, Yuichi Inazuki, Abe Tsukasa, Tadahiko Takikawa, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi, Fei Wang, Long Ma, Yan Zhao, Chiyan Kuan, Hong Xiao, Jack Jau

Proceedings Volume 7520, 75201D (2009) https://doi.org/10.1117/12.837025

KEYWORDS: Inspection, Extreme ultraviolet, Photomasks, Scanning electron microscopy, Defect detection, Opacity, Extreme ultraviolet lithography, Bridges, Silicon, Solids

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Proceedings Article | 30 September 2009 Paper

6-inch circle template fabrication for patterned media using a conventional resist and new chemically amplified resists

Morihisa Hoga, Masaharu Fukuda, Tsuyoshi Chiba, Mikio Ishikawa, Kimio Itoh, Masaaki Kurihara, Nobuhito Toyama, Naoya Hayashi

Proceedings Volume 7488, 74881S (2009) https://doi.org/10.1117/12.833449

KEYWORDS: Silicon, Quartz, Photoresist processing, Nanoimprint lithography, Chemically amplified resists, Etching, Ultraviolet radiation, Photomasks, Thin films, Beam propagation method

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Proceedings Article | 30 September 2009 Paper

Study of program defects of 22nm nanoimprint template with an advanced e-beam inspection system

Takaaki Hiraka, Jun Mizuochi, Yuko Nakanishi, Satoshi Yusa, Shiho Sasaki, Masaaki Kurihara, Nobuhito Toyama, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi, Hong Xiao, Chiyan Kuan, Fei Wang, Long Ma, Yan Zhao, Jack Jau

Proceedings Volume 7488, 74880T (2009) https://doi.org/10.1117/12.834581

KEYWORDS: Inspection, Nanoimprint lithography, Photomasks, Quartz, Vestigial sideband modulation, Defect inspection, Image processing, Manufacturing, Electronic components, Beam shaping

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Proceedings Article | 27 May 2009 Paper

UV NIL template making and imprint evaluation

Shiho Sasaki, Takaaki Hiraka, Jun Mizuochi, Yuko Sakai, Satoshi Yusa, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 7470, 74700J (2009) https://doi.org/10.1117/12.835181

KEYWORDS: Photomasks, Nanoimprint lithography, Vestigial sideband modulation, Ultraviolet radiation, Manufacturing, Optical lithography, Image processing, Transmission electron microscopy, Atomic force microscopy, Line edge roughness

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Proceedings Article | 11 May 2009 Paper

Adhesion control between resist patterns and photomask blank surfaces

Masaaki Kurihara, Sho Hatakeyama, Kouji Yoshida, Takaharu Nagai, Daisuke Totsukawa, Masaharu Fukuda, Yasutaka Morikawa, Hiroshi Mohri, Morihisa Hoga, Naoya Hayashi, Hiroyuki Ohtani, Masamichi Fujihira

Proceedings Volume 7379, 73790A (2009) https://doi.org/10.1117/12.824251

KEYWORDS: Chromium, Photomasks, Quartz, Surface roughness, Head-mounted displays, Scanning probe microscopy, Photoresist processing, Interfaces, Atomic force microscopy, Silicon

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Proceedings Article | 11 May 2009 Paper

Study of CD variation at EUV mask fabrication occurred by electric conduction from top to back side

Kosuke Takai, Koji Murano, Kazuki Hagihara, Masamitsu Itoh, Tsukasa Abe, Takashi Adachi, Hideo Akizuki, Tadahiko Takikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 7379, 73792I (2009) https://doi.org/10.1117/12.824332

KEYWORDS: Photomasks, Extreme ultraviolet, Etching, Coating, Extreme ultraviolet lithography, Mask making, Conductive coatings, Critical dimension metrology, Photoresist processing, Ions

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Proceedings Article | 11 May 2009 Paper

Study of electric-field-induced-development method

Masatoshi Terayama, Hideaki Sakurai, Mari Sakai, Masamitsu Ito, Osamu Ikenaga, Hideo Funakoshi, Takahiro Shiozawa, Syoutarou Miyazaki, Yoshihiko Saito, Naoya Hayashi

Proceedings Volume 7379, 73791X (2009) https://doi.org/10.1117/12.824310

KEYWORDS: Ions, Line edge roughness, Line width roughness, Critical dimension metrology, Spatial frequencies, Photomasks, Photoresist processing, Halftones, Scanning electron microscopy, Fourier transforms

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Proceedings Article | 11 May 2009 Paper

Progress of UV-NIL template making

Takaaki Hiraka, Jun Mizuochi, Yuko Nakanishi, Satoshi Yusa, Shiho Sasaki, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 7379, 73792S (2009) https://doi.org/10.1117/12.824342

KEYWORDS: Vestigial sideband modulation, Nanoimprint lithography, Photomasks, Inspection, Scanning electron microscopy, Quartz, Line edge roughness, Manufacturing, Transmission electron microscopy, Beam shaping

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Nano-imprint lithography (NIL) has been counted as one of the lithography candidates for hp32nm node and beyond and has showed excellent resolution capability with remarkable low line edge roughness that is attracting many researchers in the industry who were searching for the finest patterning technology. Therefore, recently we have been focusing on the resolution improvement on the NIL templates with the 100keV acceleration voltage spot beam (SB) EB writer and the 50keV acceleration voltage variable shaped beam (VSB) EB writer. The 100keV SB writers have high resolution capability, but they show fatally low throughput if we need full chip writing. Usually templates for resolution pioneers needed just a small field (several hundred microns square or so), but recently requirements for full chip templates are increasing. For full chip writing, we have also started the resolution improvement with the 50keV VSB writers used in current 4X photomask manufacturing. The 50keV VSB writers could generate full chip pattern in a reasonable time though resolution limits are inferior to that with the 100keV SB writers. In this paper, we will show latest results with both the 100keV SB and the 50keV VSB EB writers. With the 100keV SB EB writer, we have achieved down to hp15nm resolution for line and space pattern, but found that to achieve further improvement, an innovation in pattern generation method or material would be inevitable. With the 50keV VSB EB writer, we have achieved down to hp22nm resolution for line and space pattern. Though NIL has excellent resolution capability, solutions for defect inspection and repair are not clearly shown yet. In this paper, we will show preliminary inspection results with an EB inspection tool. We tested an EB inspection tool by Hermes Microvision, Inc. (HMI), which was originally developed for and are currently used as a wafer inspection tool, and now have been started to seek the application for mask use, using a programmed defect template.

Proceedings Article | 18 March 2009 Paper

UV-NIL template making and imprint evaluation

Shiho Sasaki, Takaaki Hiraka, Jun Mizuochi, Yuko Nakanishi, Satoshi Yusa, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 7271, 72711M (2009) https://doi.org/10.1117/12.815467

KEYWORDS: Photomasks, Nanoimprint lithography, Vestigial sideband modulation, Manufacturing, Ultraviolet radiation, Optical lithography, Image processing, Transmission electron microscopy, Beam shaping, Atomic force microscopy

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Proceedings Article | 20 October 2008 Paper

UV NIL template making and imprint evaluation

Shiho Sasaki, Takaaki Hiraka, Jun Mizuochi, Akiko Fujii, Yuko Sakai, Takanori Sutou, Satoshi Yusa, Koki Kuriyama, Masashi Sakaki, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 7122, 71223P (2008) https://doi.org/10.1117/12.802746

KEYWORDS: Photomasks, Vestigial sideband modulation, Nanoimprint lithography, Manufacturing, Ultraviolet radiation, Line edge roughness, Image processing, Optical lithography, Etching, Quartz

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Proceedings Article | 17 October 2008 Paper

EUVL practical mask structure with light shield area for 32nm half pitch and beyond

Takashi Kamo, Hajime Aoyama, Toshihiko Tanaka, Osamu Suga, Tsukasa Abe, Tadahiko Takikawa, Naoya Hayashi, Tsutomu Shoki, Youichi Usui, Morio Hosoya

Proceedings Volume 7122, 712227 (2008) https://doi.org/10.1117/12.801576

KEYWORDS: Photomasks, Etching, Reflectivity, Extreme ultraviolet lithography, Multilayers, Photoresist processing, Coating, Extreme ultraviolet, Lawrencium, Lithography

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Proceedings Article | 17 October 2008 Paper

Development status of back-end process for UV-NIL template fabrication

Yuichi Inazuki, Kimio Itoh, Sho Hatakeyama, Kouichirou Kojima, Masaaki Kurihara, Yasutaka Morikawa, Hiroshi Mohri, Naoya Hayashi

Proceedings Volume 7122, 71223Q (2008) https://doi.org/10.1117/12.803615

KEYWORDS: Particles, Inspection, Polishing, Nanoimprint lithography, Photomasks, Quartz, Contamination, Silicon, Surface finishing, Silica

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Proceedings Article | 17 October 2008 Paper

Study of second-generation Proximity Gap Suction Development System (PGSD-II) for mask fabrication

Hideaki Sakurai, Masatoshi Terayama, Mari Sakai, Masamitsu Itoh, Osamu Ikenaga, Hideo Funakoshi, Norifumi Sato, Kenji Nakamizo, Masato Nomura, Yoshihiko Saito, Junji Nakao, Naoya Hayashi

Proceedings Volume 7122, 71220D (2008) https://doi.org/10.1117/12.801424

KEYWORDS: Particles, Mask making, Metals, Polonium, Liquids, Control systems, Sensors, Error analysis, Atomic force microscopy, Temperature sensors

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